| PART |
Description |
Maker |
| MASWSS0091-DIE MASWSS0091SMB MASWSS0091 |
GaAs SP6T 2.5 V High Power Switch Dual / Tri / Quad-Band GSM Applications
|
MACOM[Tyco Electronics]
|
| 100C1286 |
DAICO Switches SPST, SP6T
High Isolation PIN Diode SP6T
|
DAICO[DAICO Industries, Inc.]
|
| HMC172QS2401 |
GaAs MMIC SP6T SWITCH DC - 2.5 GHz
|
Hittite Microwave Corporation
|
| SW90-0004ATR SW90-0004A SW90-0004A-TB |
GaAs SP6T Switch, Absorptive, Single Supply DC - 4.0 GHz
|
MACOM[Tyco Electronics]
|
| CP-SNT55W |
Swi tchmode power suppl ies
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| MASWSS0020 MASWSS0020SMB MASWSS0020TR |
DC-3 GHz, GaAs SP4T 2.5V high power switch
GaAs SP4T 2.5V High Power Switch DC - 3 GHz
ER 9C 6#16 3#12 SKT RECP
ER 9C 6#16 3#12 PIN RECP 砷化镓SP4T 2.5V的大功率开关直 3千兆
|
MA-Com
MACOM[Tyco Electronics]
|
| RFS1003 PRFS-1003-0009 PRFS-1003-0005 PRFS-1003-00 |
From old datasheet system
5.1-5.9 GHz U-NII Power Amplifier
The RFS1003 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 ...
|
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| FLL200IB-3 FLL200IB-2 FLL200IB-1 |
L-Band Medium & High Power GaAs FET
L-Band Medium & High Power GaAs FET L波段中等
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
Sumitomo Electric Industries, Ltd.
|
| CGD1046HI |
1 GHz, 27 dB gain GaAs high output power doubler 40 MHz - 1003 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
NXP Semiconductors N.V.
|
| TC1504N |
1W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
