| PART |
Description |
Maker |
| RJK5012DPP-E0T2 RJK5012DPP-E0-15 |
500V - 12A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6025DPH-E0 RJK6025DPH-E0T2 |
600V - 1A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6025DPE RJK6025DPE-00J3 RJK6025DPE12 |
600V - 0.8A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6011DJA-15 |
600V - 0.1A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK60S7DPQ-E0-T2 |
600V -30A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJQ6020DPM |
600V - 20A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| UPA1807 UPA1807GR-9JG UPA1807GR-9JG-E1 UPA1807GR-9 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 12A I(D) | SO
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
N Channel enhancement MOS FET
|
NEC Corp.
NEC[NEC]
|
| 12FR120 12FR120M A12FR120 A12FR120M 12FR100 12FR10 |
STANDARD RECOVERY DIODES
Hook-Up Wire; Conductor Size AWG:18; No. Strands x Strand Size:16 x 30; Jacket Color:Green/Yellow; Approval Bodies:UL, CSA; Approval Categories:UL AWM Style 1015, CSA Type TEW, JQA-F-, Passes VW-1 Flame Test RoHS Compliant: Yes 标准恢复二极
STANDARD RECOVERY DIODES 标准恢复二极
CAPACITOR 8200UF 25V ELEC TSHA
WIRE 18AWG WHITE UL 1015 600V
UL STYLE 1015, CSA TYPE TEW, 600V, 105C, GREEN W. YELLOW
WIRE, UL1015, 18AWG (16X30G), 600V, RED
100V 12A Std. Recovery Diode in a DO-203AA (DO-4)package
1000V 12A Std. Recovery Diode in a DO-203AA (DO-4)package
1200V 12A Std. Recovery Diode in a DO-203AA (DO-4)package
400V 12A Std. Recovery Diode in a DO-203AA (DO-4)package
600V 12A Std. Recovery Diode in a DO-203AA (DO-4)package
800V 12A Std. Recovery Diode in a DO-203AA (DO-4)package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| 2SJ357 D10803EJ3V0DS00 2SJ357-T1 2SJ357-T2 |
P-channel MOS FET(-30V, -3A)
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH
From old datasheet system
|
NEC[NEC]
|
| APT8075BVFR |
POWER MOS V 800V 12A 0.750 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
