| PART |
Description |
Maker |
| UPD166011T1J UPD166011T1J-E1-AY |
INTELLIGENT POWER DEVICE
|
Renesas Electronics Corporation
|
| UPD166013T1J UPD166013T1J-E1-AY |
INTELLIGENT POWER DEVICE
|
Renesas Electronics Corporation
|
| HZIP23-P-1.27F HZIP23-P-1.27H HZIP23-P-1.27G |
Intelligent Power Device High Voltage Monolithic Silicon Power IC 智能功率器件单片硅高压功率IC
|
Toshiba Corporation
Toshiba, Corp.
|
| TPD4144K |
TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4124K |
Intelligent Power Device High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4102K |
TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC 东芝智能功率器件单片硅高压功率IC
|
Toshiba, Corp.
Toshiba Semiconductor
|
| TPD1024S |
TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit
|
TOSHIBA[Toshiba Semiconductor]
|
| TPD1009S E006883 |
THOSHIBA INTELLIGENT POWER DEVICE SILICON MONOLITHIC POWER MOS INTERGRATED CIRCUIT
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| TPD2004F EE08689 |
INTELLIGENT POWER DEVICE 2-ch SQUIB DRIVER FOR AIR BAGS
SILICON MONOLITHIC POWER MOS IC
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| TPD4105AK |
TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| MIG50J101H |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
