| PART |
Description |
Maker |
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| 157AVG063MGBJ 397AVG035MGBJ 126AVG160MGBJ 337AVG01 |
Small Size - High Temperature ?Low ESR ?High Ripple Current ?Stable with Temperature ?High Frequency
|
Illinois Capacitor, Inc...
|
| MPXH6400A MPXH6400AC6U MPXH6400A6T1 MPXH6400A6U MP |
High Temperature Accuracy integrated Silicon Pressure Sensor
|
Freescale (Motorola)
FREESCALE[Freescale Semiconductor, Inc]
|
| BYZ35A22 BYZ35A2206 BYZ35A27 BYZ35A33 BYZ35A37 BYZ |
Silicon Protectifiers with TVS characteristics High-temperature diodes
|
Semikron International
|
| BYZ50A2209 BYZ50A33 BYZ50A39 BYZ50A27 BYZ50K22 BYZ |
Silicon-Protectifiers with TVS characteristic ?High Temperature Diodes
|
Diotec Semiconductor
|
| GB01SHT06-CAL-15 |
High Temperature Silicon Carbide Power Schottky Diode
|
GeneSiC Semiconductor, ...
|
| MPXHZ6250AC6T1 MPXHZ6250A |
Media Resistant and High Temperature Accuracy Integrated Silicon Pressure Sensor
|
FREESCALE[Freescale Semiconductor, Inc]
|
| SMA6J-85ATR SMA6J-85CATR SMA6J33A-TR STMICROELECTR |
600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
High junction temperature Transil
|
STMicroelectronics
|
| MPXHZ6115A |
(MPXHZ6115A / MPXHA6115A) Media Resistant and High Temperature Accuracy Integrated Silicon Pressure Sensor
|
Motorola
|
| KTY84-152 KTY84-151 KTY84-150 KTY84-130 KTY84-1 KT |
Silicon temperature sensors SPECIALTY ANALOG CIRCUIT
Silicon temperature sensors(硅元素温度传感器)
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
