| PART |
Description |
Maker |
| LXR7-RW30 LXR9-RW30 LXR8-RW35 LXR9-RW27 LXR7-RW40 |
High Flux Density and Efficacy
|
Lumileds Lighting Company
|
| LZ9-J0CW00 LZ9-K0CW00 LZ9-00CW00 |
High Luminous Efficacy Cool White LED Emitter
|
List of Unclassifed Manufacturers
|
| LXH9-FW30-Y |
High-Efficacy, Illumination Grade LED light source
|
Lumileds Lighting Compa...
|
| DS160 |
High performance LED modules with extreme efficacy for robust lighting designs
|
Lumileds Lighting Compa...
|
| MXA8-PW27-0000 MXA8-PW30-0000 MXA8-PW35-0000 MXA8- |
High efficacy up to 165 lm/W at 60 Compact 3535 form factor
High efficacy up to 165 lm/W at 60 Compact 3535 form factor
|
Lumileds Lighting Company
Lumileds Lighting Compa...
|
| MXC8-PW65-0000 MXC8-PW50-0000 MXC8-PW27-0000 MXC8- |
High efficacy for sustainable design Compact 3535 2D package
High efficacy for sustainable design Compact 3535 2D package
|
Lumileds Lighting Company
Lumileds Lighting Compa...
|
| L218-4080048C00000 |
Linear LED module on an ultra-slim and rigid substrate enabling high efficacy designs
|
Lumileds Lighting Compa...
|
| STGD18N40LZ STGB18N40LZ STGB18N40LZ-1 STGB18N40LZT |
EAS 180 mJ - 400 V - internally clamped IGBT
|
http://
STMicroelectronics
|
| STGB35N35LZ STGB35N35LZ-1 STGB35N35LZT4 |
Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ
|
STMicroelectronics
|
| STGP18N40LZ STGB18N40LZ-1 STGD18N40LZ-1 STGD18N40L |
25 A, 420 V, N-CHANNEL IGBT, TO-251
EAS 180 mJ - 390 V - internally clamped IGBT
|
ST Microelectronics
http://
STMicroelectronics
|
| AM29F040B AM29F040B-70 29F040 AM29F040B-90PIB AM29 |
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 512K X 8 FLASH 5V PROM, 55 ns, PQCC32
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 4兆位12亩8位）的CMOS 5.0伏只，统一部门快闪记忆
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 512K X 8 FLASH 5V PROM, 55 ns, PDSO32
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 512K X 8 FLASH 5V PROM, 70 ns, PDSO32
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 512K X 8 FLASH 5V PROM, 150 ns, PQCC32
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 512K X 8 FLASH 5V PROM, 90 ns, PDSO32
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 512K X 8 FLASH 5V PROM, 90 ns, PQCC32
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Uniform Sector Flash Memory
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only/ Uniform Sector Flash Memory
|
ADVANCED MICRO DEVICES INC
Advanced Micro Devices, Inc.
AMD[Advanced Micro Devices]
|
| AM29F040B-120EF AM29F040B-120EK AM29F040B-120ED AM |
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 4兆位12亩8位）的CMOS 5.0伏只，统一部门快闪记忆
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 512K X 8 FLASH 5V PROM, 120 ns, PDIP32
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 512K X 8 FLASH 5V PROM, 120 ns, PQCC32
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 512K X 8 FLASH 5V PROM, 90 ns, PDIP32
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 512K X 8 FLASH 5V PROM, 55 ns, PDSO32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
