PART |
Description |
Maker |
U74HC00-P14-T U74HC00-D14-T U74HC00-S14-R |
QUADRUPLE 2-INPUT POSITIVE-NAND GATES HC/UH SERIES, QUAD 2-INPUT NAND GATE, PDSO14 QUADRUPLE 2-INPUT POSITIVE-NAND GATES HC/UH SERIES, QUAD 2-INPUT NAND GATE, DIP14
|
Unisonic Technologies Co., Ltd.
|
AM28F512A-120JEB AM28F512A-120PEB AM28F512A-120FEB |
Divide-By-Twelve Decade Counter 14-PDIP 0 to 70 Divide-By-Twelve Decade Counter 14-SOIC 0 to 70 Quadruple 2-Input Positive-NAND Gates 14-SOIC -40 to 85 Quadruple 2-Input Positive-NAND Gates 14-SO -40 to 85 Quadruple 2-Input Positive-Nor Gates 14-TVSOP -40 to 85 4-Bit Binary Counters 14-SO 0 to 70 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 512千比特(64亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 Quadruple 2-Input Positive-Nor Gates 14-TSSOP -40 to 85 2正输入或非门 14-TSSOP封装40℃到85 Hex Inverters 14-SSOP -40 to 85 512千比特(64亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 Hex Inverters 14-TVSOP -40 to 85 512千比特(64亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 Hex Inverters 14-SO -40 to 85 512千比特(64亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 4-Bit Binary Counters 14-SOIC 0 to 70 64K X 8 FLASH 12V PROM, 150 ns, PDSO32 Quadruple 2-Input Positive-NAND Gates 14-TVSOP -40 to 85 64K X 8 FLASH 12V PROM, 200 ns, PDSO32 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 64K X 8 FLASH 12V PROM, 120 ns, PQCC32 Quadruple 2-Input Positive-NAND Gates 14-TSSOP -40 to 85 512千比特(64亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 Hex Inverters 14-SOIC -40 to 85 64K X 8 FLASH 12V PROM, 90 ns, PDIP32 Quadruple 2-Input Positive-Nor Gates 14-SO -40 to 85 64K X 8 FLASH 12V PROM, 70 ns, PQCC32 Quadruple 2-Input Positive-Nor Gates 14-SOIC -40 to 85
|
Advanced Micro Devices, Inc. PROM ADVANCED MICRO DEVICES INC
|
74HC00S14 74HC00S14-13 74HC00T14 74HC00T14-13 |
QUADRUPLE 2-INPUT NAND GATES
|
Diodes Incorporated
|
U74AHC00 U74AHC00-S14-T U74AHC00-P14-R U74AHC00-P1 |
QUADRUPLE 2-INPUT POSITIVE-NAND GATES
|
Unisonic Technologies
|
HEC4093BT HEC4093B |
HEF4093B gates; Quadruple 2-input NAND Schmitt trigger
|
Philips
|
HD74LS26 |
Quadruple 2-input High-voltage Interface Positive NAND Gates
|
HITACHI[Hitachi Semiconductor]
|
5962H9651201VXA |
RadHard MSI: SMD. Quadruple 2-input NAND gates. Class V, QML. Lead finish solder. Total dose 1E6 rads(Si).
|
Aeroflex Circuit Technology
|
5962H9651301VXX |
RadHard MSI: SMD. Quadruple 2-input NAND gates. Class V, QML. Lead finish optional. Total dose 1E6 rads(Si).
|
Aeroflex Circuit Technology
|
5962H9651301VXC |
RadHard MSI: SMD. Quadruple 2-input NAND gates. Class V, QML. Lead finish gold. Total dose 1E6 rads(Si).
|
Aeroflex Circuit Technology
|
5962H9651201QXC |
RadHard MSI: SMD. Quadruple 2-input NAND gates. Class Q, QML. Lead finish gold. Total dose 1E6 rads(Si).
|
Aeroflex Circuit Technology
|