| PART |
Description |
Maker |
| PB-IRLU8203 |
Leaded 30V Single N-Channel HEXFET Power MOSFET in a I-Pak package
|
International Rectifier
|
| PB-IRLI3803 |
Leaded 30V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
International Rectifier
|
| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
| CSB772P CSB772R CSB772 CSB772E CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P
Audio Frequency Power Amplifier and Low Speed Switching
|
CDIL[Continental Device India Limited]
|
| HP4410DY FN4468 HP4410 HP4410DYT |
From old datasheet system
10A, 30V, 0.0135 Ohm, Single N-Channel, Logic Level Power MOSFET
10A/ 30V/ 0.0135 Ohm/ Single N-Channel/ Logic Level Power MOSFET
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 30V V(BR)DSS | 10A I(D) | SO 10 A, 30 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| NTMFS4709N |
Power MOSFET 30V, 94A, Single N Channel, SOIC8 FL(30V, 94A，功MOSFET)
|
ON Semiconductor
|
| AM29C516A-1/BXC AM29C516A-1PC AM29C516-1PC AM29C51 |
30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package; Similar to IRHNA57Z60 with optional Total Dose Rating of 1000kRads
200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-1 package; A IRHN7250SE with Standard Packaging
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package. Also available with Total Dose Rating of 300kRads.; Similar to IRHNJ67130 with optional Total Dose rating of 300kRads
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package; A IRHN7130 with Standard Packaging
30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package; JANS Certified version of the IRHNA57Z60 with optional Total Dose Rating of 500kRads
30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package; Similar to IRHM7Z60 with optional Total Dose Rating of 300kRads
30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package; Similar to IRHNA57Z60 with optional Total Dose Rating of 500kRads
30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package; Similar to IRHNJ57Z30 with optional Total Dose Rating of 500kRads
Multiplier 乘数
30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package; A IRHM7Z60 with Standard Packaging 乘数
-30V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a Low-Ohmic TO-254AA package; Similar to IRHMS597Z60 with optional Total Dose Rating of 300kRads 乘数
|
Rochester Electronics, LLC
AverLogic Technologies, Corp.
Vectron International, Inc.
|
| RF1K49157 |
6.3A, 30V, Avalanche Rated, Single N-Channel LittleFET Enhancement Mode Power MOSFET
6.3A, 30V, AVALANCHE RATED, SINGLE N-CHANNEL LITTLEFET⒙ ENHANCEMENT MODE POWER MOSFET
6.3A, 30V, Avalanche Rated, Single N-Channel LittleFETEnhancement Mode Power MOSFET
|
Fairchild Semiconductor Corporation
|
| IRF3707 IRF3707L IRF3707S IRF3707PBF IRF3707STRL I |
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=30V Rds(on)max=12.5mohm Id=62A)
Power MOSFET(Vdss=30V, Rds(on)max=12.5mohm, Id=62A)
Power MOSFET(Vdss=30V/ Rds(on)max=12.5mohm/ Id=62A)
|
IRF[International Rectifier]
|
| FDS887607 FDS8876 |
N-Channel PowerTrench? MOSFET 30V, 12.5A, 8.2mΩ
N-Channel PowerTrench庐 MOSFET 30V, 12.5A, 8.2m惟
N-Channel PowerTrench㈢ MOSFET 30V, 12.5A, 8.2mヘ
|
Fairchild Semiconductor
|
