| PART |
Description |
Maker |
| AP2762I-H-HF-16 |
Fast Switching Characteristics
|
Advanced Power Electron...
|
| EP3C25F256I7N EP3C25Q240C8N EP3C10E144C7 EP3C10F25 |
1. Cyclone III Device Datasheet
The following sections provide information about the absolute maximum ratings, recommended operating conditions, DC characteristics, and other specifications for Cyclone IIIdevices
This chapterdescribes the electric characteristics, switching characteristics,and I/O timing for Cyclone III devices. A glossary is also included for your reference
This chapter describes the electric characteristics, switching characteristics, and I/O timing for Cyclone? III devices. A glossary is also included for your reference.
|
Altera Corporation
|
| AP01L60H-HF AP01L60H-HF-14 |
100% Avalanche Test, Fast Switching Characteristics
|
Advanced Power Electronics Corp.
Advanced Power Electron...
|
| IDT54FCT162374ATPFB IDT54FCT162374TPAB IDT54FCT162 |
FAST CMOS 16-BIT REGISTER (3-STATE)
Variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.40 to 3.05; Characteristics rs (ohm) max: 1.8; Characteristics C (pF) max: C1 = 2.60 to 2.90 C3 = 0.97 to 1.08; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.35 to 2.55; Characteristics rs (ohm) max: 0.6; Characteristics C (pF) max: C1=6.62 to 7.02 C4=2.60 to 2.95; Characteristics CVR/CVR: 1/4; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.10 to 2.40; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.38 to 7.92 C2.5 = 3.26 to3.58; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 1.680 to 1.750; Characteristics rs (ohm) max: 1.2; Characteristics C (pF) max: C1 = 21.50 to 24.00 C2 = 12.50 to 14.50; Characteristics CVR/CVR: 1/2; Cl: 17; Package: SFP
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.43 to 2.57; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.30 to 7.70 C2.5 = 2.90 to 3.18; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.30 to 2.46; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 7.3 to 8.6; Characteristics CVR/CVR: 0.5/2.5; Cl: 7.95; Package: SFP
Variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.28 to 2.90; Characteristics rs (ohm) max: 1.1; Characteristics C (pF) max: C1 = 2.90 to 3.30 C3 = 1.12 to 1.30; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.02 to 2.26; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 8.55 to 9.45; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.62 min; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C1 = 14.6 to 15.8 C4 = 5.20 to 5.80; Characteristics CVR/CVR: 1/4; Cl: 5.85; Package: EFP
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 3.0 min; Characteristics rs (ohm) max: 2; Characteristics C (pF) max: C1 = 41.6 to 49.9 C4 = 10.1 to 14.8; Characteristics CVR/CVR: 1/4; Cl: 12.45; Package: SFP
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 1.73 to 2.10; Characteristics rs (ohm) max: 0.7; Characteristics C (pF) max: C1 = 2.35 to 2.70 C3 = 1.22 to 1.42; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
|
Integrated Device Technology, Inc.
|
| XC4VLX40 XC4VFX40 |
DC and Switching Characteristics
|
Xilinx, Inc
|
| SIDC14D60F6 SIDC14D60F610 |
Fast switching diode 600V Emitter Controlled technology 70 μm chip soft , fast switching
|
Infineon Technologies AG
|
| XCZU2EG XCZU11EG XCZU3EG DS925 |
DC and AC Switching Characteristics
DC and AC Switching Characteristics
|
Xilinx, Inc
|
| 94SC |
General Use Capacitor with Superior High Frequency Characteristics Suitable for use in Noise Limiters and Switching Power Supplies
|
Vishay
|
| XP161A02A1PR |
N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics.
|
Torex Semiconductor
|
| DK2420FCM DK24 DK2414FCK DK2414FCM DK2416FCK DK241 |
Fast Switching Thyristor
Fast Switching Thyristor 260 A, 1600 V, SCR, TO-93
BUZZER MAGN 2.4KHZ 12.6MM SMT 260 A, 1800 V, SCR, TO-93
Fast Switching Thyristor 260 A, 2000 V, SCR, TO-93
|
DYNEX[Dynex Semiconductor]
Dynex Semiconductor Ltd.
Dynex Semiconductor, Ltd.
|
| 1SS355 1SS355-15 |
FAST SWITCHING DIODE
FAST SWITCHING DIODES
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SHENZHEN YONGERJIA INDUSTRY...
SHENZHEN YONGERJIA INDU...
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