PART |
Description |
Maker |
LY6210248GL-70LL LY6210248GL-70LLIT LY6210248ML-55 |
1024K X 8 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
LY6210248 LY6210248E LY6210248GL LY6210248GV LY621 |
1024K X 8 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
KM684000LI KM684000LI-10 KM684000LI-10L KM684000LI |
512Kx8 bit CMOS static RAM, 85ns, low power Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 524288亩字× 8位高速CMOS静态RAM 524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 524288亩字× 8位高速CMOS静态RAM RES 1.6K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA 512Kx8 bit CMOS static RAM, 100ns, low power 512Kx8 bit CMOS static RAM, 70ns, low power
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
EN39SL160H EN39SL160H-70BI EN39SL160H-70BIP EN39SL |
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only
|
Eon Silicon Solution Inc.
|
29F080-12 MX29F080TC-90 29F080-70 29F080-90 MX29F0 |
8M-BIT [1024K x 8] CMOS EQUAL SECTOR FLASH MEMORY
|
MCNIX[Macronix International]
|
K6T1008C2C K6T1008C2C-RB55 K6T1008C2C-RB70 K6T1008 |
128K X 8 STANDARD SRAM, 70 ns, PDSO32 128K x8 bit Low Power CMOS Static RAM 128K的x8位低功CMOS静态RAM 128K x8 bit Low Power CMOS Static RAM 128K的x8位低功耗CMOS静态RAM 55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM 55ns; 128 x 8-bit low power CMOS static RAM 70ns; 128 x 8-bit low power CMOS static RAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
|
BS62LV1600ECG70 BS62LV1600ECG55 BS62LV1600FCP55 BS |
Very Low Power CMOS SRAM 2M X 8 bit 极低功耗CMOS SRAMx 8 Very Low Power CMOS SRAM 2M X 8 bit 2M X 8 STANDARD SRAM, 55 ns, PBGA48 Very Low Power CMOS SRAM 2M X 8 bit 2M X 8 STANDARD SRAM, 55 ns, PDSO44
|
BRILLIANCE SEMICONDUCTOR INC BRILLIANCE SEMICONDUCTOR, Inc. Brilliance Semiconducto...
|
EN29SL800T-70KIP EN29SL800B-90MIP EN29SL800T-90MIP |
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 1.8 Volt-only
|
Eon Silicon Solution Inc. Eon Silicon Solution In...
|
EN29LV160B-90B EN29LV160B-90BI EN29LV160B-90BIP EN |
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
|
Eon Silicon Solution Inc.
|
EN29F800T90TI EN29F800 EN29F800B45S EN29F800B45SI |
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 5.0 Volt-only
|
ETC[ETC]
|
BS62LV8001 BS62LV8001EI BS62LV8001EIP55 BS62LV8001 |
Very Low Power/Voltage CMOS SRAM 1M X 8 bit Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 70 ns, PBGA48 Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 55 ns, PBGA48 Aluminum Electrolytic Capacitor; Capacitor Type:High Temperature; Voltage Rating:25VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to C; Capacitance:47uF RoHS Compliant: Yes From old datasheet system Asynchronous 8M(1Mx8) bits Static RAM
|
Brilliance Semiconducto... BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
|
ST27C1001 |
1024K CMOS UV Erasable PROM 1024K ( 128K X 8 ) CMOS UV ERASABLE PROM
|
ST Microelectronics STMicroelectronics
|