| PART |
Description |
Maker |
| IXBH16N170A IXBT16N170A |
Discrete IGBTs
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
High Voltage High Gain BIMOSFET Monolithic Bipolar MOS Transistor
High Voltage/ High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS[IXYS Corporation]
|
| IXBH28N170A |
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| ECN3022 |
High Voltage Monolithic IC
|
Hitachi
|
| HI1-565AJD-5 HI1-565AKD-5 HI1-565ASD_883 HI1-565AS |
From old datasheet system
High Speed Monolithic D/A Converter with Reference
High Speed, Monolithic D/A Converter with Reference
CIRCUIT BREAKER
High Speed/ Monolithic D/A Converter with Reference
64 MACROCELL 3.3 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN
|
INTERSIL[Intersil Corporation]
|
| ECN2112 |
(ECN2102 / ECN2112) HIGH-VOLTAGE MONOLITHIC IC
|
Hitachi Semiconductor
|
| TPD4113AK |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4105K |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| LT3587EUDPBF LT3587EUDTRPBF |
High Voltage Monolithic Inverter and Dual Boost
|
Linear Technology
|
| LT3651-4.2 |
Monolithic 4A High Voltage Li-Ion Battery Charger
|
Linear Technology
|
| LT3511-15 |
Monolithic High Voltage Isolated Flyback Converter
|
Linear Technology
|
| NCP1052ST136T3G NCP1052 NCP1053 NCP1055 NCP1054 NC |
Monolithic High Voltage Gated Oscillator Power Switching Regulator
|
ONSEMI[ON Semiconductor]
|
| ECN2102ECN2112 ECN2102 ECN2112 |
HIGH-VOLTAGE MONOLITHIC IC
IC,ELECTROLUMINESCENT DISPLAY DRIVER,SOP,48PIN,PLASTIC
|
Hitachi Semiconductor
Renesas
|
