| PART |
Description |
Maker |
| CY7C197BN-25PC CY7C197BN-15VC |
256-Kb (256 K x 1) Static RAM Fast access time: 15 ns
256 Kb (256K x 1) Static RAM 256K X 1 STANDARD SRAM, 15 ns, PDSO24
256 Kb (256K x 1) Static RAM 256K X 1 STANDARD SRAM, 25 ns, PDIP24
|
Cypress Semiconductor, Corp.
|
| CAT22C10 22C10 CAT22C10P-30TE13 CAT22C10J-20TE13 C |
256-Bit Nonvolatile CMOS Static RAM
256-Bit Nonvolatile CMOS Static RAM 256位非易失性的CMOS静态RAM
256-BitNonvolatileCMOSStaticRAM
|
CatalystSemiconductor
CATALYST[Catalyst Semiconductor]
|
| IDT70T3589S-200DRI IDT70T3589S-133BF IDT70T3589S-1 |
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 64K X 36 DUAL-PORT SRAM, 15 ns, PQFP208
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 15 ns, PQFP208
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 64K X 36 DUAL-PORT SRAM, 12 ns, PQFP208
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 12 ns, PQFP208
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 高速与3.3V 2.5V56/128/64K × 36 SYNCHRONOU S双，端口静态RAM.5V的接
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 64K X 36 DUAL-PORT SRAM, 12 ns, PBGA256
|
Integrated Device Technology, Inc.
|
| PCD5101 |
256 X 4-Bit Static RAM
|
Signetics
|
| CY7C197BN-25PC CY7C197BN-15VC CY7C197BN-12VC |
256 Kb (256K x 1) Static RAM
|
Cypress Semiconductor
|
| IDT70V3319S133PRFI IDT70V3399S166PRFI IDT70V3319S1 |
HIGH-SPEED 3.3V 256/128K x 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 高速与3.3V 3.3V56/128K × 18 SYNCHRONOU S双，端口静态RAM.5V的接
HIGH-SPEED 3.3V 256/128K x 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 128K X 18 DUAL-PORT SRAM, 15 ns, PQFP128
|
Integrated Device Technology, Inc.
|
| P4C423-10CC P4C423-10CM P4C423-10CMB P4C423-12CC P |
HIGH SPEED 256 x 4 STATIC CMOS RAM
|
Pyramid Semiconductor C...
|
| P4C422-10PC P4C422-10PM P4C422-15PC P4C422-15PM P4 |
HIGH SPEED 256 x 4 STATIC CMOS RAM
|
Pyramid Semiconductor C...
Pyramid Semiconductor Corporation
|
| CY7C194BN-15PC CY7C194BN-15VC CY7C194BN11 |
256 Kb (64 K × 4) Static RAM Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V)
|
Cypress Semiconductor
|
| TMP8156P-2 TMP8155 TMP8155P-2 |
256 BYTE STATIC RAM WITH I/O PORTS AND TIMER
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| UPD2101AL UPD2101AL-2 UPD2101AL-4 |
1024 BIT (256 X 4) STATIC MOS RAM WITH SEPARATE I/O
|
NEC
|
| AM42DL1614DT45IT AM42DL1614DB45IT AM42DL1614DB35IT |
Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM Am29DL16xD 16兆位2米8 1个M x 16位）.0伏的CMOS只，同时作业闪存兆位256亩16位），静态存储器
Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM Am29DL16xD 16兆位米8 1个M x 16位）.0伏的CMOS只，同时作业闪存兆位56亩16位），静态存储器
Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM SPECIALTY MEMORY CIRCUIT, PBGA69
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
