| PART |
Description |
Maker |
| GS82582DT19AGE-400 GS82582DT19AGE-375 GS82582DT19A |
288Mb SigmaQuad-II TM Burst of 4 SRAM
|
GSI Technology
|
| GS88018BT-133 GS88018BT-133I GS88018BT-150 GS88018 |
133MHz 8.5ns 512K x 18 9Mb sync burst SRAM
150MHz 7.5ns 512K x 18 9Mb sync burst SRAM
166MHz 7ns 512K x 18 9Mb sync burst SRAM
200MHz 6.5ns 512K x 18 9Mb sync burst SRAM
225MHz 6ns 512K x 18 9Mb sync burst SRAM
250MHz 5.5ns 512K x 18 9Mb sync burst SRAM
|
GSI Technology
|
| GS820E32A GS820E32AQ-4 GS820E32AQ-6I GS820E32AT-6I |
66MHz 18ns 64K x 32 2M synchronous burst SRAM
117MHz 11ns 64K x 32 2M synchronous burst SRAM
64K x 32 / 2M Synchronous Burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology
|
| M36P0R8070E0 M36P0R8070E0ZACE M36P0R8070E0ZACF |
256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package
|
Numonyx B.V
|
| K4C89183AF K4C89083AF-GIFB K4C89083AF-AIFB K4C8909 |
288Mb x18 Network-DRAM2 Specification 288Mb x18网络DRAM2规范
Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 100uF; Voltage: 250V; Case Size: 16x31.5 mm; Packaging: Bulk
Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 33uF; Voltage: 250V; Case Size: 12.5x20 mm; Packaging: Bulk
JT 55C 55#22M PIN PLUG
JT 8C 8#16 PIN PLUG
Thyristor / Diode Module; Repetitive Reverse Voltage Max, Vrrm:2200V; Current, It av:430A; Gate Trigger Voltage Max, Vgt:3V; Gate Trigger Current Max, Igt:200mA; Package/Case:LD43; di/dt:200A/ s RoHS Compliant: Yes
JT 55C 55#22 SKT PLUG
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M36P0R9060E0 M36P0R9060E0ZACE M36P0R9060E0ZACF |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
|
STMicroelectronics
|
| M36P0R9060N0ZANE M36P0R9060N0ZANF M36P0R9060N0 |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Mux I/O, Multi-Chip Package
|
Numonyx B.V
|
| AS7C25512FT32_36A AS7C25512FT32A-10TQC AS7C25512FT |
2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 36 STANDARD SRAM, 8.5 ns, PQFP100
2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 32 STANDARD SRAM, 10 ns, PQFP100
2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 32 STANDARD SRAM, 8.5 ns, PQFP100
DIODE ZENER SINGLE 1000mW 47Vz 5.5mA-Izt 0.05 5uA-Ir 35.8Vr DO41-GLASS 5K/REEL
Sync SRAM - 2.5V
2.5V 512K x 32/36 flowthrough burst synchronous SRAM
|
Alliance Semiconductor, Corp.
Alliance Semiconductor Corporation
ALSC
Alliance Semiconductor ...
|
| CY7C1561KV18 CY7C1561KV18-400BZC CY7C1561KV18-400B |
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: QDR-II , 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.29 ns, PBGA165
72-Mbit QDR-II SRAM 4-Word Burst Architecture
|
Cypress Semiconductor, Corp.
|
| EDI2CG272128V9D1 EDI2CG272128V12D1 EDI2CG272128V15 |
2x128Kx72, 3.3V S nc/S nc Burst Flow-Through(2x128Kx72, 3.3Vns,同步/同步脉冲静态RAM模块(流通结构）)
2x128Kx72, 3.3V S nc/S nc Burst Flow-Through(2x128Kx72, 3.3V2ns,同步/同步脉冲静态RAM模块(流通结构）)
2x128Kx72, 3.3V S nc/S nc Burst Flow-Through(2x128Kx72, 3.3V5ns,同步/同步脉冲静态RAM模块(流通结构）)
2x128Kx72.3VS数控/ s的数控突发流量通过x128Kx72.3伏，15纳秒，同同步脉冲静态内存模块（流通结构）
2x128Kx72.3VS数控/ s的数控突发流量通过x128Kx72.3伏，12ns，同同步脉冲静态内存模块（流通结构）
2x128Kx72.3VS数控/ s的数控突发流量通过x128Kx72.3伏，纳秒，同同步脉冲静态内存模块（流通结构）
SSRAM Modules 的SSRAM模块
2x128Kx72, 3.3V Sync/Sync Burst Flow-Through(2x128Kx72, 3.3V.5ns,同步/同步脉冲静态RAM模块(流通结构）) 2x128Kx72.3同步/同步突发流量通过2x128Kx72.3伏，8.5ns，同同步脉冲静态内存模块（流通结构）
2x128Kx72, 3.3V Sync/Sync Burst Flow-Through(2x128Kx72, 3.3V锛?.5ns,???/?????????RAM妯″?(娴??缁??锛?
|
White Electronic Designs Corporation
|
| GS832218B-133 GS832218B-133I GS832218B-150 GS83221 |
64K 3.3 VOLT SERIAL CONFIGURATION PROM 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
GIGABASE 350 CAT5E PATCH 1 FT, SNAGLESS, WHITE 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万18100万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36，为512k × 72分配36MBS /双氰胺同步突发静态存储器
DIODE, ZENER, 4.3V, 0.5W, 5%, -65-175C, DO-35
(GS832218 / GS832236 / GS832272) S/DCD Sync Burst SRAMs
|
ETC
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
