| PART |
Description |
Maker |
| FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| P1395-01 P2478-01 P2405 |
Resin coating.dual type
Resin coating.dual type 树脂coating.dual类型
|
HAMAMATSU[Hamamatsu Corporation]
Hamamatsu Photonics K.K.
|
| GAGEKOTE-7 |
Protective Coating
|
Vishay
|
| FSYA254R4 FSYA254D FSYA254D1 FSYA254D3 FSYA254R FS |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 21 A, 250 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 抗辐射，抗SEGR N沟道功率MOSFET
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| MPP |
Metallized Polyester Film Capacitor (Coating)
|
DB Lectro Inc.
|
| FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1 FS |
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3A 200V的电压，1.50欧姆，拉德硬，SEGR性，P通道功率MOSFET
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
From old datasheet system
3A/ -200V/ 1.50 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| HM530281RTT-34 HM530281RTT-45 HM530281RTT-20 HM530 |
34ns; V(cc): -1.0 to 7.0V; 1W; ; 331,776-word x 8-bit flame memory
25ns; V(cc): -1.0 to 7.0V; 1W; ; 331,776-word x 8-bit flame memory
20ns; V(cc): -1.0 to 7.0V; 1W; ; 331,776-word x 8-bit flame memory
331,776-word x 8-bit Frame Memory
|
Hitachi Semiconductor
|
| 1301120101 |
100W Guard Open-End with Reflector Yellow Vinyl Coating
|
Molex Electronics Ltd.
|
| JANSR2N7408 FN4637 |
Quadruple 2-Input Positive-NAND Gates 14-VQFN -40 to 85
Formerly Available As FSF450R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
From old datasheet system
Formerly Available As FSF450R4, Radiation Hardened, SEGR Resistant,N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| FSYC9160R FSYC9160R1 FSYC9160R3 FSYC9160R4 FSYC916 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
From old datasheet system
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs 47 A, 100 V, 0.053 ohm, P-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FSL130D FSL130D1 FSL130D3 FSL130R FSL130R1 FSL130R |
From old datasheet system
8A/ 100V/ 0.230 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 8A条，100V的，0.230欧姆，拉德硬，SEGR耐，N沟道功率MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
