| PART |
Description |
Maker |
| RQ3C150BCTB |
Pch -20V -30A Middle Power MOSFET
|
ROHM
|
| RF6C055BC |
Pch -20V -5.5A Middle Power MOSFET
|
ROHM
|
| QS8M51FRA QS8M51FRATR |
100V Pch Pch Middle Power MOSFET
|
ROHM
|
| RF4E075AT RF4E075ATTCR |
Pch -30V -7.5A Middle Power MOSFET
|
ROHM
|
| APT6020LVR |
POWER MOS V 600V 30A 0.200 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT12031JLL |
POWER MOS 7 1200V 30A 0.310 Ohm
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology Ltd.
|
| UPA1818 UPA1818GR-9JG UPA1818GR-9JG-A UPA1818GR-9J |
Pch enhancement MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING P沟道MOS场效应晶体管开
10000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET POWER, TSSOP-8
|
NEC Corp.
NEC, Corp.
Lattice Semiconductor, Corp.
|
| APT10026JLL |
POWER MOS 7 1000V 30A 0.260 Ohm
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology Ltd.
|
| FX30KMJ-2 FX30KMJ-2-A8 |
High-Speed Switching Use Pch Power MOS FET
|
Renesas Electronics Corporation
|
| FX6KMJ-3 FX6KMJ-3-A8 |
High-Speed Switching Use Pch Power MOS FET
|
Renesas Electronics Corporation
|
| FX20ASJ-06 FX20ASJ-06-T13 |
High-Speed Switching Use Pch Power MOS FET
|
Renesas Electronics Corporation
|
| FX6ASJ-3-T13 |
High-Speed Switching Use Pch Power MOS FET
|
Renesas Electronics Corporation
|
