| PART |
Description |
Maker |
| W9725G6KB25A W9725G6KB-25 W9725G6KB-18 W9725G6KB-3 |
DLL aligns DQ and DQS transitions with clock, Data masks (DM) for write data, Write Data Mask
|
Winbond
|
| BH6627FS |
Magnetic Disk LSIs > FDD read/write amplifier
Read /Write amplifier for FDD
Read / Write Amplifier for FDD(FDD的读/写放大器)
|
ROHM[Rohm]
Rohm CO.,LTD.
|
| AT49LV4096A AT49BV4096A AT49LV4096A-70C5I |
256K X 16 FLASH 2.7V PROM, 70 ns, PBGA48
4M bit, 2.7-Volt Read and 2.7-Volt Write, Byte-Write Flash, Bottom Boot
4M bit, 3.0-Volt Read and 3.0-Volt Write, Byte-Write Flash, Bottom Boot
|
ATMEL CORP
|
| VM710N415SSL VM710N430SSL VM710N430VSL VM710N430CP |
8-Channel Disk Read/Write Circuit
6-Channel Read/Write Circuit 6通道写电
2-Channel Disk Read/Write Circuit 2通道磁盘写电
4-Channel Disk/Tape Read/Write Circuit 4通道的磁磁带写电
|
GTM, Corp.
Microchip Technology, Inc.
RECOM Electronic GmbH
|
| VM712N415SSL VM712N830CPOL VM712N830IPOL VM712N830 |
4-Channel Disk/Tape Read/Write Circuit
8-Channel Disk Read/Write Circuit 8通道磁盘写电
2-Channel Disk Read/Write Circuit 2通道磁盘写电
|
Nihon Inter Electronics, Corp.
|
| MCM69R736AZP5 MCM69R736AZP5R MCM69R736AZP8 MCM69R7 |
4M Late Write HSTL 128K X 36 LATE-WRITE SRAM, 4 ns, PBGA119
Circular Connector; No. of Contacts:22; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:36; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:36-1 RoHS Compliant: No
|
Motorola, Inc.
Motorola Mobility Holdings, Inc.
MOTOROLA INC
|
| GS8170DW36C-250 GS8170DW36C-250I GS8170DW36C-300 G |
250MHz 512K x 36 18MB double late write sigmaRAM SRAM
300MHz 512K x 36 18MB double late write sigmaRAM SRAM
333MHz 512K x 36 18MB double late write sigmaRAM SRAM
333MHz 256K x 72 18MB double late write sigmaRAM SRAM
|
GSI Technology
|
| VM720HN6SSJ VM720L2POJ |
6-Channel Read/Write Circuit
2-Channel Disk Read/Write Circuit 2通道磁盘写电
|
Advanced Semiconductor, Inc.
|
| HM64YLB36514BP-6H HM64YLB36514 |
16M Synchronous Late Write Fast Static RAM (512-kword × 36-bit, Register-Latch Mode)
16M Synchronous Late Write Fast Static RAM (512-kword 】 36-bit, Register-Latch Mode)
Memory>Fast SRAM>Late Write / High Speed Interface Synchronous SRAM
|
Renesas Electronics Corporation
|
| 93LCS56 93LCS56-IP 93LCS56-ISL 93LCS56-ISM 93LCS56 |
2K/4K 2.5V Microwire Serial EEPROM with Software Write Protect
2K/4K 2.5V Microwire Serial EEPROM with Software Write Protect 2K/4K 2.5V的Microwire串行EEPROM，带有软件写保护
Connectors
XC95144 In-System Programmable CPLD
SERIAL ACCESS SPI BUS 4K 512 x 8 EEPROM
|
Microchip Technology, Inc.
Microchip Technology Inc.
Xilinx Inc
MICROCHIP[Microchip Technology]
ST Microelectronics
|
| VM712415SSL VM712815CPOL |
4-Channel Disk/Tape Read/Write Circuit
8-Channel Disk Read/Write Circuit 8通道磁盘写电
|
STMicroelectronics N.V.
|
| VM117-2PO VM117-4PO VM117R-4PO VM117R-2PO |
2-Channel Disk Read/Write Circuit
4-Channel Disk/Tape Read/Write Circuit 4通道的磁磁带写电
|
Digital Data Communications GmbH
|
