PART |
Description |
Maker |
SML9030-T254 SML9030T254 |
P-Channel MOS Transistor(Vdss:-50V,Id(cont):-18A,Rds(on):0.14Ω)(P沟道MOS晶体Vdss:-50V,Id(cont):-18A,Rds(on):0.14Ω))
|
Semelab(Magnatec) TT electronics Semelab Limited Seme LAB
|
IRF054SMD |
N-Channel Power MOSFET(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)(N沟道功率MOS场效应管(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)) N沟道功率MOSFET(减振钢板基本:60V的,身份证(续)5A条,的Rds(on):0.027Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本0V的,身份证(续)5A条,的Rds(on.027Ω))
|
SemeLAB Seme LAB International Rectifier http://
|
B1821BH075C300N B1821BH075C275N B1821BH038C275N B1 |
Cap Screws Cont
|
Fastenal
|
SML80A12 SML100A9 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):11.5A,Rds(on):0.650Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):11.5A,Rds(on):0.650Ω))
|
SemeLAB SEME-LAB[Seme LAB]
|
SML80H14 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 13.5 A, 800 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):13.5A,Rds(on):0.58Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):13.5A,Rds(on):0.58Ω))
|
TT electronics Semelab, Ltd. SEME-LAB[Seme LAB]
|
SML50W40 |
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:500V,Id(cont):40A,Rds(on):0.12惟)(N娌??澧?己??楂???????OS?烘?搴??(Vdss:500V,Id(cont):40A,Rds(on):0.12惟)) N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
SEME-LAB[Seme LAB] SemeLAB
|
0545480570 0545480870 0545482070 0545481070 54548- |
0.5 FPC CONN ZIF HSG ASSY FOR SMT RA BTM CONT -LEAD FREE-
|
Molex Electronics Ltd.
|
APT13GP120K |
Volts:1200V VF/Vce(ON):3.6V ID(cont):13Amps|Ultrafast IGBT Family 电压200伏室的Vceon):3.6V的身份证(续):一三安培|超快IGBT的家
|
Commonwealth Industrial, Corp.
|
ICE3AR0680JZ |
Of f -Line SMPS Cur rent Mode Cont rol ler wi th integrated 800V
|
Infineon Technologies A...
|
5-583294-2 |
.156 Centerline Connectors (AMP-LEAF); CONT AMP LEAF L/P 15 AU ( Tyco Electronics )
|
Tyco Electronics
|