| PART |
Description |
Maker |
| IRG4CC50WB |
IGBT Die in Wafer Form 600 V Size 5 WARP Speed
IRG4CC50WB IGBT Die in Wafer Form
|
Hittite Microwave Corporation
International Rectifier
|
| K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片（了x4，x8
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125
256Mb E-die DDR SDRAM Specification 66 TSOP-II
Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP
DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MR18R162GAF0 MR16R162GAF0 MR18R1624AF0 MR18R1622AF |
64M X 16 RAMBUS MODULE, DMA184
TVS 500W 6.5V BIDIRECT DO-15 6Mx16显示）2/8/16）件RIMM的模块，基于256Mb阿芯片，32秒银行，16K/32ms参考，.5V
16Mx16显示）2/8/16）件RIMM的模块，基于256Mb阿芯片，32秒银行，16K/32ms参考，.5V
(MR18R1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
(MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| SIDC01D60SIC2SAWN SIDC01D60SIC2UNSAWN |
Diodes - HV Chips - 600V, 4A die sawn
Diodes - HV Chips - 600V, 4A die unsawn
|
Infineon
|
| SIDC02D60SIC2SAWN SIDC02D60SIC2UNSAWN |
Diodes - HV Chips - 600V, 6A die sawn
Diodes - HV Chips - 600V, 6A die unsawn
|
Infineon
|
| IRLC1304 2299 |
HEXFET Power MOSFET Die in Wafer Form(晶圆形式的HEXFET 功率MOS场效应管)
From old datasheet system
HEXFET? Power MOSFET Die in Wafer Form
|
International Rectifier
|
| MURC1060 |
MURC1060 Ultrafast Silicon Die
MURC1060 Ultrafast Silicon Die
|
SENSITRON[Sensitron]
|
| PUMA2U8002I-25 PUMA2U8002I-20 PUMA2U8002M-15 PUMA2 |
DIE SALE, 1.8V,11MIL(SERIAL EE)
x32 EPROM Module
10MS, DIE, 2.7V, 11 MILS THICKNESS(SERIAL EE)
8-TSSOP, PB/HALO FREE,NiPdAu, 1.8V(SERIAL EE)
8 TSSOP, PB/HALO FREE, IND TEMP, 1.8V(SERIAL EE) X32号存储器模块
8-SAP,PB/HALO FREE,IND TEMP,2.7V(SERIAL EE) X32号存储器模块
|
NXP Semiconductors N.V.
Amphenol, Corp.
|
| 001140-2193 0011-40-2193 |
Terminator Die
|
Molex Electronics Ltd.
|
| T8303E 0011-40-2225 11402225 0011402225 |
Terminator Die
|
Molex Electronics Ltd.
|
| 0011-40-2211 0011402211 |
Terminator Die
|
Molex Electronics Ltd.
|
| 11-40-2096 T8301AX 1140-2096 0011-40-2096 |
Terminator Die
|
Molex Electronics Ltd.
|
