| PART |
Description |
Maker |
| IDT70824L IDT70824L20G IDT70824L20GB IDT70824L20PF |
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM)
|
IDT
Integrated Device Technology
|
| LUCL9310GP-DT L9310 LUCL9310AP-D LUCL9310AP-DT LUC |
Line Interface and Line Access Circuit Full-Feature SLIC,Ringing Relay,and Test Access Device
|
AGERE[Agere Systems]
|
| MAX167CCWG-T MAX192ACPP MAX186DEWP-T MAX155BCPI MA |
CMOS, 5V Input, 100ksps, 12-Bit ADC with Track/Hold and Reference 12-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, PDSO24
Low-Power, 8-Channel, Serial 10-Bit ADC 8-CH 10-BIT SUCCESSIVE APPROXIMATION ADC, SERIAL ACCESS, PDIP20
Low-Power, 8-Channel, Serial 12-Bit ADCs 8-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, SERIAL ACCESS, PDSO20
High-Speed, 8-Channel, 8-Bit ADC with Simultaneous Track/Holds and Reference 8-CH 8-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, PDIP28
CMOS, 20µs, 8-Bit, 8-Channel Data Acquisition System 8-CH 8-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, PDIP28
Dual-Channel, 10-Bit, 130Msps ADC; Package: THIN QFN, 48 pin ; Temperature Range: -40°C to 85°C 2-CH 10-BIT FLASH METHOD ADC, PARALLEL ACCESS, QCC48
75ksps, 5V, 12-Bit ADC with Track/Hold and Reference 1-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, SERIAL/PARALLEL ACCESS, PDSO24
2.7V, Low-Power, 2-Channel, 108ksps, Serial 10-Bit ADCs in 8-Pin µMAX 2-CH 10-BIT SUCCESSIVE APPROXIMATION ADC, SERIAL ACCESS, PDSO8
Industry-Standard, 12-Bit ADC with Reference 1-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, PDIP28
Low-Power, 12-Bit Sampling ADC with Internal Reference and Power-Down 1-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, SERIAL/PARALLEL ACCESS, PDSO24
12-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, PDIP24
|
Maxim Integrated Products, Inc.
MAXIM INTEGRATED PRODUCTS INC
|
| HM514260AJ-10 HM514260AJ-8 HM514260ALJ-7 HM514260A |
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
100ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
262, 144-Word x 16-Bit Dynamic Random Access Memory
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
HITACHI[Hitachi Semiconductor]
ITT, Corp.
|
| WE128K32N-120G2TC WE128K32N-120G2TCA WE128K32N-120 |
Access time:120 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:150 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:200 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:140 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:300 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:250 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:240 ns; 128K x 32 EEPROM module, SMD 5962-94585
|
White Electronic Designs
|
| HB561008AR-20 HB561008A-20 HB561008B-12 HB561008B- |
x8 Fast Page Mode DRAM Module
262114-word x 8 bit dynamic random access memory module
26214-word x 8-bit dynamic random access memory module
262锛?14-word x 8-bit dynamic random access memory module
|
Hitachi,Ltd.
|
| MAX1239EEE-T MAX122BEAG MAX122BEAGT MAX1241AESA-T |
2.7V to 3.6V and 4.5V to 5.5V, Low-Power, 4-/12-Channel, 2-Wire Serial, 12-Bit ADCs 12-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, SERIAL ACCESS, PDSO16
500ksps, Sampling, 12-Bit ADC with Track/Hold and Reference 1-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, PDSO24
2.7V, Low-Power, 12-Bit Serial ADCs in 8-Pin SO 1-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, SERIAL ACCESS, PDSO8
|
Maxim Integrated Products, Inc.
|
| AD7827BR-REEL AD7827BR-REEL7 AD7827BRZ AD7827BN |
3 V/5 V, 1 MSPS, 8-Bit, Serial Interface Sampling ADC 1-CH 8-BIT FLASH METHOD ADC, SERIAL ACCESS, PDSO8
14-Bit 48KSPS DAS with ADC, MUX, PGA and Internal Reference 28-SSOP -40 to 85 1-CH 8-BIT FLASH METHOD ADC, SERIAL ACCESS, PDIP8
3/5V, 1 MSPS, 8-Bit, Serial Interface Sampling ADC; Package: SOIC; No of Pins: 8; Temperature Range: Commercial 1-CH 8-BIT FLASH METHOD ADC, SERIAL ACCESS, PDSO8
|
Analog Devices, Inc.
|
| K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| AS29F040 AS29F040-120LC AS29F040-150LC AS29F040-15 |
5V 512K x 8 CMOS flash EEPROM, access time 70ns
5V 512K x 8 CMOS flash EEPROM, access time 55ns
5V 512K x 8 CMOS flash EEPROM, access time 90ns
|
ALSC[Alliance Semiconductor Corporation]
|
|
