| PART |
Description |
Maker |
| XP05555 |
TRANSISTOR | BJT | PAIR | NPN | 200MA I(C) | SOT-363 晶体管|晶体管|一对| npn型| 200毫安一（c）|的SOT - 363
|
Panasonic Industrial Solutions
|
| UMT2N |
SOT-363 Plastic-Encapsulate Transistors
|
TY Semiconductor Co., Ltd
|
| CJ3134KDW |
SOT-363 Plastic-Encapsulate MOSFETS
|
TY Semiconductor Co., Ltd
|
| K4H560838E-GC/LA2 K4H560838E-GC/LB0 K4H560838E-GC/ |
DIODE ZENER TRIPLE ISOLATED 200mW 39.13Vz 5mA-Izt 0.02518 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 36.28Vz 5mA-Izt 0.02522 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 22.08Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 22.1Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 13.79Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 14Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 12.9Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 11.1Vz 10mA-Izt 0.02523 0.1uA-Ir 8.4 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 23.7Vz 5mA-Izt 0.02509 0.05uA-Ir 19 SOT-23 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mW 12.88Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-363 3K/REEL
256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
http://
|
| UMZ1N |
SOT-363 Plastic-Encapsulate Biploar Transistors
|
Micro Commercial Components
|
| MMDT540111 MMDT5401-TP |
Plastic-Encapsulate Transistors
TRANS SS PNP DL 150V SOT-363
|
Micro Commercial Components
|
| DDC122LU-7-F DDC142TU DDC142TU-7-F DDC142JU DDC142 |
NPN PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR
|
Diodes Incorporated
|
| DCX122LU-7-F DCX122TU-7-F DCX142TU-7-F DCX142JU-7- |
COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR
|
Diodes Inc.
|
| DCX142JU DCX122LU DCX142TU DCX142TU-7-F DCX142JU-7 |
COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR
|
DIODES[Diodes Incorporated]
|
| CY7C1338F CY7C1338F-100AI CY7C1338 CY7C1338F-66BGI |
DIODE ZENER TRIPLE ISOLATED 200mW 36Vz 0.05mA-Izt 0.05 0.05uA-Ir 27.3 SOT-363 3K/REEL 128K X 32 CACHE SRAM, 11 ns, PBGA119
DIODE ZENER TRIPLE ISOLATED 200mW 39Vz 0.05mA-Izt 0.05 0.05uA-Ir 29.6 SOT-363 3K/REEL 128K X 32 CACHE SRAM, 11 ns, PBGA119
4-Mb (128K x 32) Flow-Through Sync SRAM 128K X 32 CACHE SRAM, 11 ns, PQFP100
DIODE ZENER TRIPLE ISOLATED 200mW 33Vz 0.05mA-Izt 0.05 0.05uA-Ir 25 SOT-363 3K/REEL 128K X 32 CACHE SRAM, 11 ns, PQFP100
4-Mb (128K x 32) Flow-Through Sync SRAM 128K X 32 CACHE SRAM, 7.5 ns, PQFP100
|
CYPRESS[Cypress Semiconductor]
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| K4D263238E K4D263238E-GC25 K4D263238E-GC2A K4D2632 |
1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
DIODE ZENER SINGLE 300mW 15.2Vz 10mA-Izt 0.02535 0.05uA-Ir 12 SOT-23 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mW 15.2Vz 10mA-Izt 0.02535 0.05uA-Ir 12 SOT-363 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mW 17.88Vz 10mA-Izt 0.02545 0.05uA-Ir 14 SOT-363 3K/REEL 100万x 32Bit的4银行图形双数据速率同步DRAM的双向数据选通和DLL
DIODE ZENER SINGLE 300mW 17.9Vz 10mA-Izt 0.02545 0.05uA-Ir 14 SOT-23 3K/REEL 100万x 32Bit的4银行图形双数据速率同步DRAM的双向数据选通和DLL
DIODE ZENER SINGLE 300mW 16.1Vz 10mA-Izt 0.02547 0.05uA-Ir 12 SOT-23 3K/REEL 100万x 32Bit的4银行图形双数据速率同步DRAM的双向数据选通和DLL
DIODE ZENER TRIPLE ISOLATED 200mW 16.1Vz 10mA-Izt 0.02547 0.05uA-Ir 12 SOT-363 3K/REEL 100万x 32Bit的4银行图形双数据速率同步DRAM的双向数据选通和DLL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| BSD223P |
Low Voltage MOSFETs - OptiMOS MOSFET, -20V, SOT-363
OptiMOS -P Small-Signal-Transistor
CHOKE RF COATED 1.8UH 10%
|
Infineon Technologies A...
Infineon Technologies AG
Philips Semiconductors
|
