| PART |
Description |
Maker |
| IRC-PB IRC-PB151 IRC-PB21 IRC-PBCF IRC-PB301 |
Infrarot-Temperatur-Messger?te
|
ASM GmbH
|
| IRC-PU2.2 |
Infrarot-Temperatur-Messger?te
|
ASM GmbH
|
| IRC-PE |
Infrarot-Temperatur-Messger?t
|
ASM GmbH
|
| GS-F8MB-SIMM 4962 |
8MByte SIMM Flash Memory Module(8M字节SIMM闪速存储器模块) 8MByte上海药物研究所闪存模块（上海药物研究所800万字节闪速存储器模块
8M X 8 FLASH 5V PROM MODULE, 70 ns, SMA80 SIMM-80
From old datasheet system
8 MByte SIMM FLASH MEMORY MODULE
|
Numonyx Asia Pacific Pte, Ltd.
STMicroelectronics N.V.
ST Microelectronics
意法半导
|
| BR34E02NUX-WTR |
DDR/DDR2 (For memory module) SPD Memory
|
Rohm
|
| 2832483 |
Memory module, 2 port twisted pair module for saving the switch configuration
|
PHOENIX CONTACT
|
| M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL
Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| 69F1608RPFH 69F1608RPFK |
128 Megabit (16M x 8-Bit) Flash Memory Module 16M X 8 FLASH 5V PROM MODULE, 35 ns, DFP24
|
Maxwell Technologies, Inc
|
| L9D232M80SBG5 |
2 - 5.0 Gb, DDR2, 32 M [64 M] x 64/72/80 Integrated Memory Module
|
LOGIC Devices Incorpora...
|
| IC-176-4-MF IC-176-2-MF IC-176-6-MF IC-176-10-MF I |
Single Inline Memory Module (SIMM)
|
Yamaichi Electronics Co., Ltd.
|
| 32MB08F-02 |
(32MB08F-01/-02) 32MB Flash Memory Module
|
Hybrid Design Associates
|
