| PART |
Description |
Maker |
| SBRT3M40P1-15 |
3A Trench SBR TRENCH SUPER BARRIER RECTIFIER POWERDI?123
|
Diodes Incorporated
|
| FGA25N120ANTD |
1200V NPT-Trench IGBT Using Fairchild's proprietary trench design and advanced NPT technology
1200V NPT Trench IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| FGA15N120ANTD FGA15N120ANTD07 FGA15N120ANTDF109 FG |
1200V NPT Trench IGBT
NPT Trench Technology, Positive temperature coefficient
Extremely enhanced avalanche capability
|
Fairchild Semiconductor
List of Unclassifed Manufacturers
|
| FGA25N120ANTDTU |
1200V, 25A, NPT Trench IGBT
1200 V, 25 A NPT Trench IGBT
|
Fairchild Semiconductor
|
| Q67040S4721 Q67040S4723 Q67040S4725 IGW50N60T IGB5 |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
LOW LOSS IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY
|
INFINEON[Infineon Technologies AG]
|
| CM150TJ-12F |
Trench Gate Design Six IGBTMOD?/a> 150 Amperes/600 Volts
Trench Gate Design Six IGBTMOD⑩ 150 Amperes/600 Volts
Trench Gate Design Six IGBTMOD 150 Amperes/600 Volts
128 x 64 pixel format, LED or EL Backlight available
|
POWEREX[Powerex Power Semiconductors]
|
| FDB86360-F085 FDB86360F085 |
N-Channel Power Trench MOSFET 80V, 110A, 1.8mOhms
N-Channel Power Trench? MOSFET
|
Fairchild Semiconductor
|
| NTST20100CT-D NTSJ20100CTG NTSB20100CTT4G NTSB2010 |
Very Low Forward Voltage Trench-based Schottky Rectifier
Very Low Forward Voltage Trench-based Schottky Trench-based Schottky
|
ON Semiconductor
|
| SBL20U80-15 |
Low VF Trench Barrier Schottky Rectifier
Voltage 80V 20.0 Amp Low VF Trench Barrier Schottky Rectifier
|
SeCoS Halbleitertechnol...
|
| CM100TU-24F |
Trench Gate Design Six IGBTMOD100 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD 100 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD⑩ 100 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD?/a> 100 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM600HA-5F |
Trench Gate Design Single IGBTMOD600 Amperes/250 Volts
Trench Gate Design Single IGBTMOD 600 Amperes/250 Volts
Trench Gate Design Single IGBTMOD⑩ 600 Amperes/250 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| FDMC8296 FDMC829610 |
30V N-Channel Power Trench MOSFET; Package: Power 33 (PQFN); No of Pins: 8; Container: Tape & Reel 12 A, 30 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Power Trench? MOSFET 30V, 18A, 8.0m
|
Fairchild Semiconductor, Corp.
|
