| PART |
Description |
Maker |
| SFH4556 |
IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant
|
OSRAM GmbH
|
| ML9XX31 ML9SM31 ML9SM31-01-00 ML9SM31-01-01 ML9SM3 |
1536 nm, LASER DIODE
1553 nm, LASER DIODE
1558 nm, LASER DIODE
1544 nm, LASER DIODE
InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管EA调制
InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管与EA调制
1549 nm, LASER DIODE
|
Mitsubishi Electric Semicon...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| ADL-65075TA2 |
General purpose red laser light source Laser pointer lndustrial laser markers measuring instruments
|
Roithner LaserTechnik GmbH
|
| BT1074BI |
Single chip 850-950 MHz RF transeiver
SINGLE CHIP 850-950MHz RF TRANSCEIVER
From old datasheet system
|
BTI BethelTronix
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| ML725AA11F ML725B11F ML725J11F ML720L11S ML720AA11 |
1310 nm, LASER DIODE
MITSUBISHI LASER DIODES InGaAsP DFB LASER DIODES 三菱激光二极管InGaAsP的DFB激光器
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| PSMN034-100PS |
N-channel 100 V 34.5 m惟 standard level MOSFET in TO220.
N-channel 100 V 34.5 mΩ standard level MOSFET in TO220.
N-channel 100 V 34.5 m standard level MOSFET in TO220. 32 A, 100 V, 0.0345 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
|
| MAX3946ETG |
1.0625Gbps to 11.3Gbps, SFP Laser Driver with Laser Impedance Mismatch Tolerance
|
Maxim Integrated Products
|
| M02066-21 M02066-EVME |
Drivers, 3.3V Laser Driver IC for Applications to 3Gbps
Optical evaluation board, TO-can laser
|
Mindspeed Technologies
|
| ATR0842 |
4-channel LVDS Laser Diode Driver with High Voltage Output for Blue Laser
|
Atmel
|
| RLD78NZC3 |
Laser Diodes > For Laser Printers, Sensoers > For Laser Printers
|
ROHM
|
| AOT292 AOT292L |
TO220 PACKAGE MARKING DESCRIPTION
|
Alpha & Omega Semiconductors
|
