| PART |
Description |
Maker |
| 1214-110V |
Pulsed Power L-Band (Si)
|
Microsemi
|
| 1214-150L |
Pulsed Power L-Band (Si)
|
Microsemi
|
| 1214-300M |
Pulsed Power L-Band (Si)
|
Microsemi
|
| 1214-300V |
Pulsed Power L-Band (Si)
|
Microsemi
|
| 2731-20 |
Pulsed Power S-Band (Si)
|
Microsemi
|
| 3134-100M |
Pulsed Power S-Band (Si)
|
Microsemi
|
| RFHA1021U |
60W GaN Wide-Band Pulsed Power Amplifier
|
RF Micro Devices
|
| PH2729-150M07 PH2729-150M |
S BAND, Si, NPN, RF POWER TRANSISTOR
Radar Pulsed Power Transistor 150W, 2.7-2.9 GHz, 100レs Pulse, 10% Duty
Radar Pulsed Power Transistor 150W, 2.7-2.9 GHz, 100渭s Pulse, 10% Duty
Radar Pulsed Power Transistor 150W, 2.7-2.9 GHz, 100μs Pulse, 10% Duty
|
Tyco Electronics
|
| HVV1011-300 HVV1011-300-EK |
L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50μs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications
L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50レs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications
|
HVVi Semiconductors, Inc.
|
| HVV1214-075 |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200レs Pulse, 10% Duty for Ground Based Radar Applications
|
HVVi Semiconductors, Inc.
|
| MDS800 |
RF Power Transistors: AVIONICS
MODE-S, 1030/1090 MHz, Class C, Common Base, Pulsed ; P(out) (W): 800; P(in) (W): 110; Gain (dB): 8.5; Vcc (V): 50; Pulse Width (µsec): 128; Duty Cycle (%): 2; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technology
Microsemi, Corp.
|
|
