PART |
Description |
Maker |
2731-200P |
Pulsed Power S-Band (Si)
|
Microsemi
|
1214-300M |
Pulsed Power L-Band (Si)
|
Microsemi
|
1214-300V |
Pulsed Power L-Band (Si)
|
Microsemi
|
1214-700P |
Pulsed Power L-Band (Si)
|
Microsemi
|
3134-100M |
Pulsed Power S-Band (Si)
|
Microsemi
|
2731-100M |
Pulsed Power S-Band (Si)
|
Microsemi
|
HVV1012-100 |
L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10楼矛s Pulse, 1% Duty for DME and TCAS Applications L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10μs Pulse, 1% Duty for DME and TCAS Applications
|
HVVi Semiconductors, Inc.
|
MAPR-001011-850S00 |
L BAND, Si, NPN, RF POWER TRANSISTOR ROHS COMPLIANT, HERMETIC SEALED, CERAMIC PACKAGE-2 Avionics Pulsed Power Transistor 850W, 1025-1150 MHz, 10μs Pulse, 1% Duty Avionics Pulsed Power Transistor 850W, 1025-1150 MHz, 10楼矛s Pulse, 1% Duty
|
M/A-COM Technology Solutions, Inc.
|
HVV1011-300 HVV1011-300-EK |
L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50μs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50レs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications
|
HVVi Semiconductors, Inc.
|
HVV1214-100 HVV1214-100-EK |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200渭s Pulse, 10% Duty For Ground Based Radar Applications L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty For Ground Based Radar Applications
|
HVVi Semiconductors, Inc.
|
HVV1214-025 |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200楼矛s Pulse, 10% Duty for Ground Based Radar Applications L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications
|
HVVi Semiconductors, Inc.
|
1214-700P |
700 Watts - 300楼矛s, 10%, 50V L-Band Pulsed Radar 1200 - 1400 MHz 700 Watts - 300μs, 10%, 50V L-Band Pulsed Radar 1200 - 1400 MHz
|
Microsemi Corporation
|
|