PART |
Description |
Maker |
APT10SCD65KCT |
SiC Schottky Diodes
|
Microsemi
|
LSIC2SD120C10 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current
|
Littelfuse
|
IDH20G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDH04G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
LSIC2SD120A20 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability and a maximum operating junction temperature of 175 °C
|
Littelfuse
|
BAT68-02L BAT68-07 BAT68-08S BAT68-09S BAT68-06W B |
Silicon Schottky Diodes 硅肖特基二极 Schottky Diodes - Silicon RF Schottky diode for mixer applications in the VHF/UHF range Schottky Diodes - Silicon RF Schottky diode array
|
INFINEON[Infineon Technologies AG]
|
AN4242 |
New generation of 650 V SiC diodes
|
STMicroelectronics
|
SML10SIC03YC |
SiC SCHOTTKY DIODE
|
Seme LAB
|
SML10SIC03NJC |
SiC SCHOTTKY DIODE
|
Seme LAB
|
IDH08S120 |
thinQ SiC Schottky Diode
|
Infineon Technologies AG
|
SCS215AG |
SiC Schottky Barrier Diode
|
Rohm
|