| PART |
Description |
Maker |
| MSICSX05120E3 |
SiC Schottky Diodes
|
Microsemi
|
| Q67040S4647 SDT08S60 |
Silicon Carbide Schottky Diodes - 8A diode in TO220-2 package
Thinq SiC Schottky Diode
|
Infineon Technologies AG
|
| IDH03G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH20G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH05G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| SCS210AM |
Switching loss reduced, enabling high-speed switching . (2-pin package)
SiC Schottky Barrier Diodes
|
ROHM
ROHM Co., Ltd.
|
| 10-FZ06NBA110FP-M306L28 |
high speed IGBT with C6 MOSFET and SiC buck diodes
|
Vincotech
|
| SML05SC06D3B SML05SC06D3A |
SiC SCHOTTKY DIODE
|
Seme LAB
|
| FMDA-10565 |
SiC Schottky Diode
|
Sanken electric
|
| SCS120AG1104 |
SiC Schottky Barrier Diode
|
Rohm
|
| SCS215AG |
SiC Schottky Barrier Diode
|
Rohm
|
