| PART |
Description |
Maker |
| APT75DF170HJ |
FRED 50-1700V
|
Microsemi
|
| APTDF200H120G |
FRED 50-1700V
|
Microsemi
|
| APTDF100H100G |
FRED 50-1700V
|
Microsemi
|
| APTDF100H20G |
FRED 50-1700V
|
Microsemi
|
| APT60DF60HJ |
FRED 50-1700V
|
Microsemi
|
| APTDF500U20G |
FRED 50-1700V
|
Microsemi
|
| STC06IE170HV |
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17?/a>
Emitter switched bipolar transistor ESBT 1700V - 6A - 0.15 Ohm
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17з
|
http://
ST Microelectronics, Inc.
STMicroelectronics
|
| STC04IE170HV |
Emitter switched bipolar transistor ESBT? 1700V - 4A - 0.17 W
Emitter switched bipolar transistor ESBT㈢ 1700V - 4A - 0.17 W
|
STMicroelectronics
|
| C67047-A2251-A2 BYP301 |
FRED-FET Diode
CAT5E 350MHZ PATCH CORD, 1 FT BLUE,SNAGLESS BOOT
FRED Diode (Fast recovery epitaxial diode Soft recovery characteristics)
From old datasheet system
|
Infineon
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| ENA1967 |
N-Channel Power MOSFET, 1700V, 3A, 10.5Ohm, TO-3PF-3L
|
ON Semiconductor
|
| STC04IE170HV STC04IE170HV0611 |
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17
|
STMicroelectronics
|
| 2MBI450VN-170-50 |
IGBT MODULE (V series) 1700V / 450A / 2 in one package
|
Fuji Electric
|
