| PART |
Description |
Maker |
| HL9-100KWTQ HL9-101KWTQ HL9-102KWTQ HL9-1R0KWTQ HL |
1 ELEMENT, 56 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 820 uH, GENERAL PURPOSE INDUCTOR
HIGH CURRENT POWER CHOKES
1 ELEMENT, 100 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 56000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 2.7 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 18 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 10 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 10000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 39 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 27 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 3300 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1200 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 2200 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1500 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 47 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 5.6 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 270 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 4700 uH, GENERAL PURPOSE INDUCTOR
|
RCD COMPONENTS INC.
|
| 2SA812 2SA812M6 2SA812M4 2SA812M5 2SA812M7 2SB812- |
Silicon transistor
AUDIO FREQUENCY,GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
AUDIO FREQUENCY/GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 100MA I(C) | SOT-346
|
NEC
|
| BC413B BC413C BC383K |
Low Level and General Purpose Amplifiers
TRANSISTOR|BJT|NPN|30VV(BR)CEO|100MAI(C)|TO-92
|
Micro Electronics
|
| 154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五（巴西）总裁| 7.5AI（丙
|
NXP Semiconductors N.V.
Bel Fuse, Inc.
YEONHO Electronics Co., Ltd.
|
| HN1A01FUGR HN1A01FU |
Transistor Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
TRANSISTOR | BJT | PAIR | PNP | 50V V(BR)CEO | 150MA I(C) | TSOP
|
TOSHIBA
|
| BC550C BC550C_RR BC549 BC549C BC550 |
TRANSISTORSOT-54
TRANSISTOR|BJT|NPN|45VV(BR)CEO|100MAI(C)|TO-92
NPN general purpose transistors 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
http://
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| 2SA1162 E000475 2SA1162GR 2SA1162-GRT5LM |
TRANS GP BJT PNP 50V 0.15A 3(2-3F1A)
TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba Semiconductor
|
| 2PB1219 2PB1219AS 2PB1219A 2PB1219AQ 2PB1219AR 2PB |
PNP general purpose transistor
TRANS GP BJT PNP 50V 0.5A 3SOT323 T/R
|
PHILIPS[Philips Semiconductors]
Philips Semiconductors / NXP Semiconductors
|
| HN2C01FU HN2C01FUGR |
TRANSISTOR | BJT | PAIR | NPN | 50V V(BR)CEO | 150MA I(C) | TSOP 晶体管|晶体管|一对|叩| 50V五（巴西）总裁| 150毫安一c）|的TSOP
Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
Omron Electronics, LLC
TOSHIBA
|
| ADY27IV AL100 AL102 AL103 ASZ17 ASZ15 ASZ16 ASZ18 |
TRANSISTOR | BJT | PNP | 130V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 130V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 8A I(C) | TO-3
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 8A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 26V V(BR)CEO | 4A I(C) | TO-66VAR
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 600MA I(C) | TO-8
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | TO-8
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 600MA I(C) | TO-8
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 4A I(C) | TO-3
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 20A I(C)
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-3
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 3.5A I(C) | TO-3 晶体管|晶体管|进步党| 30V的五（巴西）总裁| 3.5AI（丙）|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-3 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 3A条一c）|
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 10A I(C) | TO-41 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 10A条一（c）|1
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 8A I(C) | TO-8 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 8A条一（c）|
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 3A I(C) | TO-3 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 3A条一（c）|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 25A I(C) 晶体管|晶体管|进步党| 60V的五（巴西）总裁|5A一（c
|
Cypress Semiconductor, Corp.
Vicor, Corp.
Atmel, Corp.
Advanced Analogic Technologies, Inc.
EPCOS AG
|
