| PART |
Description |
Maker |
| M464S1724CT1-L1L_C1L M464S1724CT1-L1H_C1H M464S172 |
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Data sheet
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存4Banks4K的刷新，3.3V的同步DRAM的社民党
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存BanksK的刷新，3.3V的同步DRAM的社民党
16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| M464S0924CT2 M464S1724CT2 |
8M x 64 SDRAM SODIMM based on 8M x 16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Datasheet
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Serial Presence Detect
|
Samsung Electronic
|
| M366S3253BTS-C75 M366S3253BTS |
32MB x 64 SDRAM DIMM based on 32MB x 8, 4Banks, 8KB Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MC33023 MC33023DWR2 |
HI-SPD PWM Controller
|
ON Semiconductor
|
| 1977-50-A02 1977-50-A01 1977-50-A00 1977-50-A03 19 |
High Frequency Coaxial SPD
|
Bourns Electronic Solutions
|
| R26-401-BGL R26-242-BGL R26-801-BGL R26-900-BGL R2 |
SPD (Surge Protective Device)
|
Okaya Electric America, Inc.
|
| 1420-PV-1000 |
DC Power SPD for Photovoltaic Applications
|
Bourns Electronic Solutions
|
| STTS2004B2DN3F |
2.2 V memory module temperature sensor with a 4 Kb SPD EEPROM
|
ST Microelectronics
|
| W3DG7263V7D2 W3DG7263V10D2 W3DG7263V75D2 W3DG7263V |
512MB - 64Mx72 SDRAM, REGISTER and SPD, w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| W3DG72256V-D2 |
2GB - 256Mx72 SDRAM, REGISTER and SPD, w/PLL
|
http://
|
| M366S0823D M366S0823DTS |
PC100 Unbuffered DIMM(168pin) SPD Specification(64Mb D-die base)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
