| PART |
Description |
Maker |
| RHRP640CC FN4464 RHRP660CC RHRP650CC |
6A, 600V Ultrafast Dual Diodes(6A, 600V 瓒?揩??????)
6A/ 400V - 600V Hyperfast Dual Diodes
6A, 600V Ultrafast Dual Diodes(6A, 600V 超快双二极管)
6A, 400V - 600V Hyperfast Dual Diodes
From old datasheet system
|
HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
|
| D1NF60 |
Super Fast Recovery Rectifiers(600V 0.8A) 超快速恢复（600V.8A
|
Shindengen Electric Mfg.Co....
Shindengen Electric Mfg.Co.Ltd
Glenair, Inc.
|
| FFH50US60S |
50A, 600V StealthDiode 50 A, 600 V, SILICON, RECTIFIER DIODE, TO-247
50A, 600V Stealth⑩ Diode
50A, 600V Stealth Diode
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| IRG4BC10SD-L IRG4BC10SD-S |
600V DC-1 kHz (Standard) Copack IGBT in a D2-Pak package
600V DC-1 kHz (Standard) Copack IGBT in a TO-262 package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)
|
IRF[International Rectifier]
|
| IRG4PC50W IRG4PC50WPBF |
600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.30V, @Vge=15V, Ic=27A)
|
IRF[International Rectifier]
|
| ISL9860PF2 ISL9R860PF2 SAMSUNGSEMICONDUCTORCO.LTD. |
8A, 600V Stealth⑩ Diode
8A 600V Stealth Diode
8A, 600V Stealth Diode 8A条，600V的隐形二极管
|
FAIRCHILD[Fairchild Semiconductor]
SAMSUNG[Samsung semiconductor]
Fairchild Semiconductor Corporation
SAMSUNG SEMICONDUCTOR CO. LTD.
Fairchild Semiconductor, Corp.
Samsung Semiconductor Co., Ltd.
|
| HGT1Y40N60B3D |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 40A I(C) | TO-264
70A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQU1N60C FQD1N60C FQD1N60CTF FQD1N60CTM FQU1N60CTU |
600V N-Channel Advance QFET C-Series
600V N-Channel MOSFET
From old datasheet system
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRG4BC20FD IRG4BC20FDPBF |
600V Fast 1-8 kHz Copack IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)
|
International Rectifier
IRF
|
| SSW4N60B SSI4N60B SSI4N60BTU SSW4N60BTM |
600V N-Channel MOSFET 4 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
600V N-Channel B-FET / Substitute of SSI4N60A
600V N-Channel B-FET / Substitute of SSW4N60A
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
