| PART |
Description |
Maker |
| APTDF60H601G |
FRED 50-1700V
|
Microsemi
|
| APT30DF60HJ |
FRED 50-1700V
|
Microsemi
|
| C67047-A2252-A2 BYP302 |
FRED Diode(FRED 二极 李华明二极管（弗雷德二极管）
FRED Diode (Fast recovery epitaxial diode Soft recovery characteristics)
From old datasheet system
FRED-FET Diode
|
Siemens Semiconductor G...
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| STC03DE170HP07 STC03DE170HP |
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 }
Hybrid emitter switched bipolar transistor ESBT㈢ 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT庐 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT? 1700V - 3A - 0.33 W
|
ST Microelectronics
STMicroelectronics
|
| CM300DU-34KA |
IGBT Modules:1700V
|
Mitsubishi Electric Corporation
|
| C3D10170H |
1700V, Z-Rec? Schottky, TO-247-2 package
|
Wolfspeed
|
| WPH4003 WPH4003-1E |
N-Channel Power MOSFET 1700V, 3A, 10.5, TO-3PF-3L
|
ON Semiconductor
|
| BYP103 C67047-A2066-A2 SIEMENSAG-C67047-A2066-A2 |
From old datasheet system
FRED DIODE (FAST RECOVERY EPITAXIAL DIODE SOFT RECOVERY CHARACTERISTICS)
FRED-FET Diode
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| ENA1967 |
N-Channel Power MOSFET, 1700V, 3A, 10.5Ohm, TO-3PF-3L
|
ON Semiconductor
|
| MIMMG150SR170B |
1700V 150A IGBT Module RoHS Compliant
|
Micross Components
|
| 2MBI450VN-170-50 |
IGBT MODULE (V series) 1700V / 450A / 2 in one package
|
Fuji Electric
|
