| PART |
Description |
Maker |
| NTMFS08N004C |
N-Channel Shielded Gate PowerTrench MOSFET
|
ON Semiconductor
|
| FDMS004N08C |
N-Channel Shielded Gate PowerTrench MOSFET
|
ON Semiconductor
|
| FDD86326 |
N-Channel Shielded Gate PowerTrench MOSFET 80 V, 37 A, 23 m Ohm
|
Fairchild Semiconductor
|
| STS12NH3LL |
N-CHANNEL 30V - 0.008 Ohm - 12A SO-8 ULTRA LOW GATE CHARGE STripFET™ MOSFET
N-CHANNEL 30 V - 0.008 ?- 12 A SO-8 ULTRA LOW GATE CHARGE STripFET MOSFET
N-CHANNEL PowerMESH MOSFET
N-CHANNEL 30 V - 0.008 з - 12 A SO-8 ULTRA LOW GATE CHARGE STripFET⑩ MOSFET
N-CHANNEL 30 V - 0.008 з - 12 A SO-8 ULTRA LOW GATE CHARGE STripFETMOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| ULS-2812H-883 ULS-2802H-883 ULS-2012H-883 ULS-2022 |
N-CHANNEL 100V - O.33 Ohm - 2A SOT-223 STRIPFET POWER MOSFET
N-channel 500V - 2.5O - 4A - TO-220 PowerMESH™ II MOSFET
Single exclusive OR gate
Single bus buffer (3-state)
SINGLE 8 CHANNEL ANALOG MULTIPLEXERS-DEMULTIPLEXERS
Single 2-input OR gate
ST72101/ST72212/ST72213 - 8-BIT MCU WITH 4 TO 8K ROM/OTP/EPROM, 256 BYTES RAM, ADC, WDG, SPI AND 1 OR 2 TIMERS
GPS PROCESSOR 八进制外设驱
Quad 2-input nand gate 2输入与非
Single inverter 单反相器
N-channel 100V - 0.32 O - 5A - TO-251/TO-252 STripFET™ Power MOSFET
|
Allegro MicroSystems, Inc.
Panasonic, Corp.
|
| MGS05N60D_D ON1885 MGS05N60D MGS05N60D-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
IGBT 0.5 A @ 25 600 V
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
| MCP3204-BISL MCP3204-CIST MCP3204-CIP MCP3204-BIP |
2.7V 4-Channel/8-Channel 12-Bit A/D Converters with SPI Serial Interface 2.7 4-Channel/8-Channel 12位A / D转换器具有SPI串行接口
TWIST-LOK 2.93,1 2.7 4-Channel/8-Channel 12位A / D转换器具有SPI串行接口
CBS SCREW-MOUNT NYLON 3/4,1 2.7 4-Channel/8-Channel 12位A / D转换器具有SPI串行接口
TWIST-LOK 2.68,1 2.7 4-Channel/8-Channel 12位A / D转换器具有SPI串行接口
400000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN 2.7 4-Channel/8-Channel 12位A / D转换器具有SPI串行接口
|
Microchip Technology Inc.
Microchip Technology, Inc.
|
| 558-7106 558-7106-16-00-00 558-7106-11-00-00 |
Variable Coil, Shielded, Vertical, .09μH thru 12.0mΗ
SHIELDED, 8 uH - 12 uH, VARIABLE INDUCTOR
SHIELDED, 1.2 uH - 1.8 uH, VARIABLE INDUCTOR
|
CAMBION Electronic Components
WEARNES CAMBION LTD
|
| SGM2013 SGM2013N |
UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
GaAs N-channel Dual-Gate MES FET
GaAs N-channel Dual-Gate MES FET
|
SONY[Sony Corporation]
SONY [Sony Corporation]
|
| 3SK320 |
RF Dual Gate FETs
N CHANNEL DUAL GATE MES TYPE (UHF BAND LOW NOISE AMP, MIX)
|
Toshiba Semiconductor
|
| 165-05A06S 164-04A06 165-04A06S |
NOT RoHS. RF inductor, tunable, aluminum core, shielded (add 'L' for compliant version) SHIELDED, 0.043 uH - 0.05 uH, VARIABLE INDUCTOR
UNSHIELDED, 0.052 uH - 0.077 uH, VARIABLE INDUCTOR
SHIELDED, 0.035 uH - 0.041 uH, VARIABLE INDUCTOR
|
Coilcraft, Inc.
COILCRAFT INC
|
