| PART |
Description |
Maker |
| NE3508M04-A NE3508M04-T2 NE3508M04-T2-A NE3508M04 |
HETERO JUNCTION FIELD EFFECT TRANSISITOR 异质结型场效TRANSISITOR
HETERO JUNCTION FIELD EFFECT TRANSISITOR 异质结型场效应TRANSISITOR
|
California Eastern Laboratories, Inc.
CEL[California Eastern Labs]
|
| 2N4948 |
PN UNIJUNCTION TRANSISTORS
|
Digitron Semiconductors
|
| NTE6409 |
Unijunction Transistor
|
NTE[NTE Electronics]
|
| MPU6027 MPU6028 |
PROGRAMMABLE UNIJUNCTION TRANSISTORS
|
Digitron Semiconductors
|
| 2N6027 2N6027G-T92-B 2N6027L-T92-B |
PROGRAMMABLE UNIJUNCTION TRANSISTOR
|
Unisonic Technologies
|
| 2N6028RLRA 2N6028RLRM 2N6028RLRP |
Programmable Unijunction Transistor
|
ON Semiconductor
|
| 2N4853 2N4851 2N4852 |
SILICON ANNULAR UNIJUNCTION TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc.
|
| 2N6138-1 |
SILICON PROGRAMMABLE UNIJUNCTION TRANSISTOR
|
New Jersey Semi-Conductor Products, Inc.
|
| D5K2 |
Silicon Complementary Unijunction Transistor
|
New Jersey Semi-Conductor P...
|
| MTW4N80E MTW4N80 |
TMOS E-FET POWER FIELD EFFECT TRANSISITOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS是电子场效应功率场效TRANSISITOR N沟道增强模式硅栅
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| 2N4851 |
(2N4851 - 2N4853) PN SILICON UNIJUNCTION TRANSISTOR
|
Central Semiconductor
|
