PART |
Description |
Maker |
2N6649E3 2N6648E3 |
BJT( BiPolar Junction Transistor) Darlington Transistors
|
Microsemi
|
S13003A |
Bipolar Junction Transistor
|
Shenzhen Jingdao Electr...
|
2N538 2N522 2N941 2N586 2N502A 2N795 2N738 2N779 2 |
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | PNP | 8V V(BR)CEO | TO-5 TRANSISTOR | BJT | PNP | 8V V(BR)CEO | 50MA I(C) | TO-18 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | TO-9 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | TO-9 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 50MA I(C) | TO-18 TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 100MA I(C) | TO-18 TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 200MA I(C) | TO-18 TRANSISTOR | BJT | PNP | 12V V(BR)CEO | 100MA I(C) | TO-18 TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 100MA I(C) | TO-18 TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 100MA I(C) | TO-18 TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 1A I(C) | TO-5 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 50MA I(C) | TO-18 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | TO-18 晶体管|晶体管|叩| 50V五(巴西)总裁|8 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-5 晶体管|晶体管|进步党| 30V的五(巴西)总裁| 500mA的一(c)|
|
Central Semiconductor, Corp. Microsemi, Corp.
|
2SD2351VWT106 2SD2654VWTL 2SD2226KVWT146 2SD2227SW |
Transistors > Small Signal Bipolar Transistors(up to 0.6W) TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-346 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-416 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
|
ROHM
|
5KP170 5KP170A |
170.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
P4KE350 |
284.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
|
MDE Semiconductor
|
FXT3866SM FXT449SM FXT549SM FXT749SM FXT649SM FXT6 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SOT-89 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | SOT-89 TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 2A I(C) | SO TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 2A I(C) | SO TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 500MA I(C) | SO TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管| npn型| 150伏五(巴西)总裁| 1A条一(c)| TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 2A I(C) | SO 晶体管|晶体管|进步党| 100V的五(巴西)总裁|甲一(c)| TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | SOT-89 晶体管|晶体管|进步党| 60V的五(巴西)总裁| 1A条一(c)|采用SOT - 89 TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管|叩| 45V的五(巴西)总裁| 1A条一(c)| TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 400MA I(C) | SO 晶体管|晶体管|叩| 30V的五(巴西)总裁| 400mA的一(c)| TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | SOT-89
|
Zetex Semiconductor PLC Fujitsu, Ltd. Bourns, Inc. Amphenol, Corp.
|
ZXTN25020DFHTA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
|
Diodes
|
DCX69-13 DCX69-16 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
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Diodes
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ZXTD618MC |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
|
Diodes
|
ZXTC2062E6 ZXTC2062E6TA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
|
Diodes
|
ZTX618 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
|
Diodes
|