| PART |
Description |
Maker |
| LET16060C |
60W 28V 1.6GHz LDMOS TRANSISTOR
|
ST Microelectronics
|
| D1023UK D1023 |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(60W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应60W-28V-500MHz,单端) 金镀金属多功能硅的DMOS射频场效应管0 28V 175MHz时，单端）（镀金多用的DMOS射频硅场效应管（60 28V的，500MHz的单端式））
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
Microsemi, Corp.
|
| MAPLST1820-060CF |
RF Power Field Effect Transistor LDMOS, 1800 - 2000 MHz, 60W, 26V
|
Tyco Electronics
|
| PXAC182002FC-V1 |
High Power RF LDMOS FET 180W, 28V, 1805 - 1880 MHz
|
Wolfspeed
|
| MAPLST2122-015CF |
RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 15W, 28V
|
Tyco Electronics
|
| MAPLST1617-030CF |
RF Power Field Effect Transistor LDMOS, 1600 - 1700 MHz, 30W, 28V
|
Tyco Electronics
|
| SY58034U |
6GHz, 1:6 CML FANOUT BUFFER WITH 2:1 MUX INPUT AND INTERNAL I/O TERMINATION 6GHz:6扇出缓冲器与白血:1 MUX输入和内部的I / O终止
|
Micrel Semiconductor, Inc.
|
| D1053 D1053UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(50W-28V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应50W-28V-1GHz,推挽) 金镀金属多功能硅的DMOS射频场效应管50 28V 1GHz的，推挽式）（镀金多用的DMOS射频硅场效应管（50 28V 1GHz的，推挽式）
METAL GATE RF SILICON FET
|
3M Company
SEME-LAB[Seme LAB]
|
| MFE960 MFE990 |
N-CHANNEL ENHANCEMENT-MODE TMOS FIELD-EFFECT TRANSISTO
|
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| IRIS4011K IRIS4011 2189 IRISMPS2 |
INTEGRATED SWITCHER 多功能开
AC-DC flyback power supply, IRIS4011(K), universal input, 12VOUT, 2A IOUT
60W Output AC-DC Integrated Switchers in a TO-262 (5-Lead) package
60W Output AC-DC Integrated Switchers in a TO-220 (5-Leads) package
From old datasheet system
|
International Rectifier, Corp.
IRF[International Rectifier]
http://
|
| D1006UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(120W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应120W-28V-175MHz,单端))
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
