| PART |
Description |
Maker |
| TLP250 |
TRANSISTOR INVERTER FOR AIR CONDITIONOR IGBT GATE DRIVE POWER MOS FET GATE DRIVE
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| STL90N3LLH6 |
Low gate drive power losses
|
STMicroelectronics
|
| HM41-11410LF HM41-21015LF HM41-10812LF HM41-12020L |
Toroid Style Gate Drive Transformers PULSE TRANSFORMER FOR GATE DRIVE APPLICATION(S)
|
BI Technologies Corporation
BI Technologies, Corp.
|
| RQJ0304DQDQA |
Low gate drive
|
TY Semiconductor Co., Ltd
|
| 2SK3000 |
Low on-resistance 4V gate drive devices.
|
TY Semiconductor Co., Ltd
TY Semiconductor Co., L...
|
| AP9918GJ |
Low on-resistance, Capable of 2.5V gate drive
|
Advanced Power Electronics Corp.
|
| AP4224LGM-HF AP4224LGM-HF-14 |
Low On-Resistance, Capable of 2.5V Gate Drive
|
Advanced Power Electronics Corp.
Advanced Power Electronics ...
|
| STGP10M65DF2 |
Trench gate field-stop IGBT, M series 650 V, 10 A low loss
|
STMicroelectronics
|
| DA2318-ALD |
Transformer, gate drive, SMT, RoHS PULSE TRANSFORMER FOR GATE DRIVE APPLICATION(S)
|
Coilcraft, Inc.
|
| AP60T03GI AP60T03GI14 AP60T03GI-14 |
Simple Drive Requirement Low Gate Charge
|
Advanced Power Electronics Corp.
Advanced Power Electronics ...
|
| APT10026L2LL_03 APT10026L2LL APT10026L2LL03 APT100 |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
38 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET TO-264MAX, 3 PIN
|
Microsemi Corporation
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
