| PART |
Description |
Maker |
| EDI8L32256V15AI EDI8L32256V12AC EDI8L32256V15AC ED |
15ns; 3.3V power supply; 256K x 32; 8 megabit CMOS static RAM
12ns; 3.3V power supply; 256K x 32; 8 megabit CMOS static RAM
17ns; 3.3V power supply; 256K x 32; 8 megabit CMOS static RAM
|
White Electronic Designs
|
| IS61LV25616-12T IS61LV25616-10LQ IS61LV25616-10LQI |
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K X 16 STANDARD SRAM, 10 ns, PQFP44
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K × 16高速异步的CMOS静态RAM.3V电源
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K X 16 STANDARD SRAM, 12 ns, PDSO44
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K X 16 STANDARD SRAM, 12 ns, PQFP44
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K X 16 STANDARD SRAM, 15 ns, PBGA48
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K X 16 STANDARD SRAM, 7 ns, PDSO44
IntelliMAX Advanced Load Management Products; Package: Power 33; No of Pins: 6; Container: Tape & Reel 256K X 16 STANDARD SRAM, 15 ns, PDSO44
IntelliMAX Advanced Load Management Products; Package: Power 33; No of Pins: 6; Container: Tape & Reel
|
INTEGRATED SILICON SOLUTION INC
Aeroflex, Inc.
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
|
| EDI8L24129V-BC EDI8L24129V12BI EDI8L24129V EDI8L24 |
10ns; 3.3V power supply; 128K x 24 SRAM
SRAM MCP
SDR Connector; No. of Contacts:26; Pitch Spacing:0.8mm; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes
128K X 24 SRAM 3.3 VOLT 128K的X 24 SRAM.3
15ns; 3.3V power supply; 128K x 24 SRAM
|
Electronic Theatre Controls, Inc.
White Electronic Designs
|
| EDI8L32128V12AC EDI8L32128V12AI EDI8L32128V15AC ED |
12ns; 3.3V power supply; 128K x 32 CMOS high speed static RAM
15ns; 3.3V power supply; 128K x 32 CMOS high speed static RAM
20ns; 3.3V power supply; 128K x 32 CMOS high speed static RAM
|
White Electronic Designs
|
| 71V416S15PHG IDT71V416L IDT71V416S |
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) Single 3.3V power supply
|
Integrated Device Technology
|
| MBM29LV400T MBM29LV400B |
CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16V 电源电压闪速存储器) 的CMOS 4分（12k × 8/256K × 16Falsh存储器（12k × 8/256K × 16位单5V的电源电压闪速存储器
|
Fujitsu Limited
Fujitsu, Ltd.
|
| EDI88512CA_LPA-B32 EDI88512CA_LPA-C EDI88512CA_LPA |
20ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
17ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
35ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
45ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
25ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
15ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
512Kx8 Monolithic SRAM SMD 5962-95600
512Kx8 Monolithic SRAM, SMD 5962-95600
SRAM
60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R
12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R
NTC Thermistor; Series:PANR; Thermistor Type:NTC; Resistance:1kohm; Beta:3500; Package/Case:Radial; Leaded Process Compatible:Yes; Mounting Type:Through Hole; R/T Curve:M; Terminal Type:Radial Leaded RoHS Compliant: Yes
12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R 静态存储器
60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R 静态存储器
12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP 静态存储器
55ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
|
White Electronic Designs
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| KM616U4000B |
256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低电压CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| V53C104HK55L V53C104HP60L |
IC OPAMP DUAL 16V DIP8
ULTRA-HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM 超高性能，低功耗，256K × 4位快速页面模式的CMOS动态随机存储器
|
Mosel Vitelic, Corp.
|
| M27C2001-55C1 M27C2001-10F1 M27C2001-10C1 M27C2001 |
256K X 8 UVPROM, 55 ns, CDIP32
256K X 8 UVPROM, 70 ns, CDIP32
256K X 8 OTPROM, 80 ns, PDIP32
256K X 8 OTPROM, 80 ns, PQCC32
2 MBIT (256KB X8) UV EPROM AND OTP ROM
|
STMICROELECTRONICS
ST Microelectronics
|
| IC62LV2568L-70TI IC62LV2568L IC62LV2568L-100B IC62 |
256K x 8 LOW POWER AND LOW Vcc CMOS STATIC RAM 256K × 8低功耗和低成本吓的CMOS静态RAM
|
Lattice Semiconductor, Corp.
ICSI[Integrated Circuit Solution Inc]
|
| IS61LV25616L-15T IS61LV25616L IS61LV25616L-10LQI I |
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
|
ISSI[Integrated Silicon Solution, Inc]
|
