| PART |
Description |
Maker |
| IRF7476PBF |
HEXFET Power MOSFET ( VDSS = 12V , RDS(on) max = 8.0mΩ@VGS = 4.5V , ID = 15A )
HEXFET Power MOSFET ( VDSS = 12V , RDS(on) max = 8.0mヘ@VGS = 4.5V , ID = 15A )
|
International Rectifier
|
| AO3414 KO3414 |
VDS (V) = 20V ID= 4.2A (VGS=4.5V) RDS(ON) 50m (VGS = 4.5V) RDS(ON) 63m (VGS = 2.5V)
|
TY Semiconductor Co., Ltd
|
| 2SK3377 |
Low on-resistance RDS(on)1 = 44 m MAX. (VGS = 10 V, ID = 10 A)
|
TY Semiconductor Co., Ltd
|
| 2SK3402 |
Low on-resistance RDS(on)1 =15 m MAX. (VGS = 10 V, ID = 18A)
|
TY Semiconductor Co., Ltd
|
| FQA13N80-F109 |
12.6 A, 800 V, RDS(on) = 750 mΩ (Max.) @ VGS = 10 VID = 6.8 A
|
Fairchild Semiconductor
|
| 2SK3109 |
Gate voltage rating -30 V Low on-state resistance RDS(on) = 0.4 MAX. (VGS= 10 V, ID = 5.0 A)
|
TY Semiconductor Co., Ltd
|
| 2SK3434 |
Super low on-state resistance: RDS(on)1 = 20m MAX. (VGS= 10 V, ID = 24A)
|
TY Semiconductor Co., L...
|
| KO3404 |
VDS (V) = 30V ID =5.8 A (VGS=10V) RDS(ON) 28 m (VGS = 10V)
|
TY Semiconductor Co., Ltd
|
| 2SK2415 |
Low On-Resistance RDS(on)1 = 0.10 MAX. ( VGS = 10 V, ID = 4.0A) Low Ciss Ciss = 570 pF TYP.
|
TY Semiconductor Co., Ltd
|
| KDB3652 |
rDS(ON) = 14m (Typ.), VGS = 10V, ID = 61A Qg(tot) = 41nC (Typ.), VGS = 10V
|
TY Semiconductor Co., L...
|
| IPP05N03L IPB05N03L |
80 A, 30 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
OptiMOS Buck converter series
?OptiMOSPowerMOSFET.30V.TO-220.RDSon=5.2mOhm.80A.LL?
OptiMOS Power MOSFET, 30V, TO-220, RDSon = 5.2mOhm, 80A, LL
OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 5.2mOhm, 80A, LL
|
INFINEON[Infineon Technologies AG]
|
| LS4D28-100-RN LS4D28-270-RN LS4D28-271-RN LS4D28-3 |
Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= 0.2 V, Enhancement Mode, 8L SOIC, EPAD Enabled 1 ELEMENT, 3.9 uH, GENERAL PURPOSE INDUCTOR, SMD
Surface Mount Power Inductors 1 ELEMENT, 12 uH, GENERAL PURPOSE INDUCTOR, SMD
Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= 0.0 V, 8L PDIP, EPAD Enabled
Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= 0.4 V, Enhancement Mode, 8L PDIP, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= 1.4 V, 16L SOIC, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= 1.4 V, 16L PDIP, EPAD Enabled
|
http://
ICE Components, Inc.
ICE COMPONENTS INC
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