| PART |
Description |
Maker |
| BUP314S C67040-A4207-A2 |
IGBT (HIGH SWITCHING SPEED VERY LOW SWITCHING LOSSES LOW TAIL CURRENT LATCH-UP FREE AVALANCHE RATED)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| IGC89T170S8RM |
low switching losses
|
Infineon Technologies A...
|
| IRF7494TRPBF IRF7495TRPBF |
HEXFETPower MOSFET
Low Gate to Drain Charge to Reduce Switching Losses
|
International Rectifier
|
| IKQ50N120CH3 |
Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode
|
Infineon Technologies A...
|
| IKY75N120CH3 |
Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode
|
Infineon Technologies A...
|
| MKP1839 |
C-values 1000 pF - 10 μF, Voltage 160 - 630 VDC, Tolerances to 1%, Low losses, Low dielectric absorption, Low profile, AXIAL
|
Vishay
|
| IKW30N65NL5 |
Best-in-Class tradeoff between conduction and switching losses
|
Infineon Technologies A...
|
| SPA15N60C3 SPP15N60C3 SPI15N60C3 |
for lowest Conduction Losses & fastest Switching
|
Infineon
|
| SPI07N60C3 SPA07N60C3 SPP07N60C3 |
for lowest Conduction Losses & fastest Switching
|
Infineon
|
| SBM3060VDC |
Ultra Low forward voltage drop, low power losses
|
Pan Jit International Inc.
|
