| PART |
Description |
Maker |
| FS1UM-18A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
|
| Q62705-K274 KPY33-RK |
Standard Recovery Rectifier; Forward Current:20A; Forward Current Average:12.7A; Forward Current Avg Rectified, IF(AV):12.7A; Forward Surge Current Max, Ifsm:300A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
Silicon Piezoresistive Relative Pressure Sensor
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MB354 MB358 MB3505 KBPC3510 MB351 |
High forward surge current capability
|
Shenzhen Ping Sheng Electronics Co., Ltd.
|
| KBPC3510NW KBPC3505NW1 KBPC3502NW KBPC3504NW |
l High forward surge current capability
|
Shenzhen Ping Sheng Electronics Co., Ltd.
|
| WF512K32N-90H1M5A WF512K32 WF512K32F-120G1UC5 WF51 |
REED RELAY, 4PST, HG WET, 12V, DIODE RoHS Compliant: No
512Kx32 5V FLASH MODULE, SMD 5962-94612 512Kx32 5V的闪存盘，贴962-94612
RES 3K-OHM 5% 0.75W 250PPM THK-FILM SMD-2010 TR-7-PA 512Kx32 5V的闪存盘，贴962-94612
Reed Relay; Contacts:SPST; Switching Current Max:0.5A; Switching Voltage Max:200V; Contact Carry Current:1A; Coil Voltage DC Max:5V; Relay Terminals:DIP-14; Relay Mounting:PC Board; Contact Carrying Power:10W
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
Standard Recovery Rectifier; Forward Current:20A; Forward Current Average:12.7A; Forward Current Avg Rectified, IF(AV):12.7A; Forward Surge Current Max, Ifsm:300A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
Dry Reed Relay; Contacts:DPST-2NO; Contact Carry Current:1A; Coil Voltage DC Max:5V; Relay Terminals:Thru Hole; Switching Current Max:0.5A; Switching Voltage Max:200V; Contact Carrying Power:10W; Leaded Process Compatible:Yes RoHS Compliant: Yes
x32 Flash EEPROM Module
100ns; 5V power supply; 512K x 32 flash module, SMD 5962-94612
|
Electronic Theatre Controls, Inc.
http://
List of Unclassifed Manufacturers
ETC[ETC]
White Electronic Designs
|
| KSQ60A03LB |
Low Forward Voltage Drop Low Power Loss, High Efficiency, High Surge Current Capability
|
NIEC[Nihon Inter Electronics Corporation]
|
| NP3100SDMCT3G NP0720SDMCT3G NP1300SDMCT3G NP1500SD |
Low Cap TSPD Surge Devices - 200A
High Current TSPD
|
ON Semiconductor
|
| KBU6M |
High forward surge current capability
|
Mospec Semiconductor
|
| 93C86 93C86-EP 93C86-ESN 93C86-IP 93C86-ISN 93C86- |
8K/16K 5.0V Microwire Serial EEPROM
16K 5.0V Microwire Serial EEPROM(4.5~5.5V,16K10M次擦写周具上掉电数据保护电路,EEPROM)
8K/16K 5.0V Microwire Serial EEPROM 8K/16K 5.0V Microwire串行EEPROM
Standard Recovery Rectifier; Repetitive Reverse Voltage Max, Vrrm:400V; Forward Current Avg Rectified, IF(AV):300A; Non Repetitive Forward Surge Current Max, Ifsm:6500A; Forward Voltage Max, VF:1.4V; Package/Case:DO-205 8K/16K 5.0V Microwire串行EEPROM
|
MICROCHIP[Microchip Technology]
Microchip Technology Inc.
Microchip Technology, Inc.
|
| GBJ30B GBJ30G |
Low forward voltage, high forward current
|
GeneSiC Semiconductor, ...
|
| STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| 2SJ626 2SJ626-T1B 2SJ626-T2B |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:30V; Forward Voltage Max, VF:1V; Vf Test Current:5mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:150mA; Forward Current Max, If:150mA; Forward Voltage:1.0V MOS场效应管
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC, Corp.
NEC[NEC]
|
