| PART |
Description |
Maker |
| 408-8737 |
The die assembly consists of an indenter die and nest die. Each die is held in the tool by a single screw
|
Tyco Electronics
|
| TLE5009A16 |
Available as single die and dual die with separate supplies for each die
|
Infineon Technologies A...
|
| AM29BL802C_03 AM29BL802C AM29BL802CB80DGE1 AM29BL8 |
Am29BL802C (Known Good Die Supplement)
8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only, Burst-mode, Boot Sector Flash Memory-Die Revision 1
|
Advanced Micro Devices
SPANSION[SPANSION]
|
| K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片（了x4，x8
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125
256Mb E-die DDR SDRAM Specification 66 TSOP-II
Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP
DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| SIDC01D60SIC2SAWN SIDC01D60SIC2UNSAWN |
Diodes - HV Chips - 600V, 4A die sawn
Diodes - HV Chips - 600V, 4A die unsawn
|
Infineon
|
| RSB |
2 Pole relay suitable
|
ETC
|
| STP19N06L STP19N06LFI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
|
ST Microelectronics
|
| STP25N06 STP25N06FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
|
ST Microelectronics
|
| BUZ80FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
|
ST Microelectronics
|
| STP5N30 STP5N30FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
|
ST Microelectronics
|
| STP40NE03L-20 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
|
ST Microelectronics
|
| ART915X25275YZ25-IC |
Suitable for non-metal surfaces
|
Abracon Corporation
|
