| PART |
Description |
Maker |
| IRGPS4067DPBF |
Low VCE (on) Trench IGBT Technology
|
International Rectifier
|
| APT75GN120J |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 68; 124 A, 1200 V, N-CHANNEL IGBT
|
Microsemi, Corp.
|
| IXGP10N60A |
Low VCE(sat) IGBT, High speed IGBT 20 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
IXYS, Corp.
|
| IXGN60N60 |
Ultra-Low VCE(sat) IGBT
IGBT Discretes: Low Saturation Voltage Types Single IGBT
|
IXYS[IXYS Corporation]
|
| IXGH12N60B |
HiPerFAST IGBT(VDSS00V，VCE(sat).1V的HiPerFAST绝缘栅双极晶体管) 24 A, 600 V, N-CHANNEL IGBT, TO-247AD
HiPerFAST IGBT(VDSS00V，VCE(sat).1VB>HiPerFAST绝缘栅双极晶体管)
HiPerFASTTM IGBT
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| IXGM17N100A IXGH17N100 IXGH17N100A IXGM17N100 |
Low VCE(sat) IGBT, High speed IGBT
|
IXYS[IXYS Corporation]
|
| GP401DDS18 |
Low VCE(SAT) Dual Switch IGBT Module Preliminary Information
Low VCE(SAT) Dual Switch IGBT Module Preliminary Information 400 A, 1800 V, N-CHANNEL IGBT
|
DYNEX[Dynex Semiconductor]
Dynex Semiconductor, Ltd.
|
| IXGH38N60 |
Ultra-Low VCE(sat) IGBT(1.8V超低VCE(sat)的绝缘栅双极晶体 75 A, 600 V, N-CHANNEL IGBT, TO-247AD
|
IXYS, Corp.
|
| IXSH20N60U1 IXSH20N60AU1 |
Low VCE(sat) IGBT with Diode, High Speed IGBT with Diode
|
IXYS[IXYS Corporation]
|
| IXGH31N60U1 |
Ultra-Low VCE(sat) IGBT with Diode
|
IXYS[IXYS Corporation]
|
| IXGH25N120 |
Low VCE(sat) High speed IGBT
|
IXYS Corporation
|
