| PART |
Description |
Maker |
| SFF1605GA |
16.0 Amperes Insulated Common Anode Super Fast Recovery Rectifiers
|
Thinki Semiconductor Co...
|
| SFF2001GA SFF2002GA SFF2003GA |
20.0 Amperes Insulated Dual Common Anode Super Fast Recovery Rectifiers
|
Thinki Semiconductor Co...
|
| PM200CSE060 |
FLAT-BASE TYPE INSULATED INSULATED PACKAGE 平性基地型绝缘绝缘包装
FLAT-BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| IRG4PC30W IRG4PC30WPBF |
Insulated Gate Bipolar Transistors (IGBTs)(绝缘栅型双极型晶体管) 绝缘门双极晶体管（IGBTs）（绝缘栅型双极型晶体管
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| PM30RSF060 |
FLAT-BASE TYPE INSULATED PACKAGE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| PM200CSE06005 |
FLAT-BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
| PM25CLB12005 |
FLAT-BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
| PM25CLA12005 |
FLAT-BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
| PM50RSK060 |
FLAT BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
| PM50RSE120 |
FLAT BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
