| PART |
Description |
Maker |
| 2SCR514PFRA |
Middle Power Transistor (80V / 0.7A)
|
Rohm
|
| 2SCR574DA07 |
NPN 2.0A 80V Middle Power Transistor
|
Rohm
|
| 2SCR293PFRA |
Middle Power Transistor (30V / 1A)
|
Rohm
|
| 2SCR542F3TL |
NPN 3.0A 30V Middle Power Transistor
|
ROHM
|
| 2SAR533D 2SAR533P 2SAR533P13 |
PNP -3.0A -50V Middle Power Transistor
|
Rohm
|
| D45C11 D45C2 D45C8 D44C5 D44C8 D45C5 D44C11 D44C1 |
POWER TRANSISTORS(4A,30-80V,30W) 功率晶体管（4A30 - 80V的，功率30W
OSC 5V 8PIN CMOS PROGRAM
POWER TRANSISTORS(4A/30-80V/30W)
TRANSISTOR|BJT|PNP|80VV(BR)CEO|4AI(C)|TO-220AB
POWER TRANSISTORS(4A30-80V30W)
|
Mospec Semiconductor, Corp.
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| 2SCR346P |
NPN 100mA 400V Middle Power Transistor
|
ROHM
|
| CFB949AQ CFD1275AQ CFB949AP CFD1275AP CFD1275R CFB |
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AQ
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949AQ
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275AP
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949AP
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 2500 hFE. Complementary CFB949R
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275P
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AR
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275A
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949Q
|
Continental Device India Limited
|
| MJD44H11 MJD44H11-001 MJD45H11-001 MJD45H11T4G MJD |
SILICON POWER TRANSISTORS 8 A, 80 V, NPN, Si, POWER TRANSISTOR
Power 10A 80V PLA NPN
Power 10A 80V PLA PNP
|
ONSEMI[ON Semiconductor]
|
| HUF75542S3S HUF75542P3 FN4845 HUF75542S3ST |
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 75A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 75A条（丁）|263AB
75A, 80V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs 75 A, 80 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
75A/ 80V/ 0.014 Ohm/ N-Channel/ UltraFET Power MOSFETs
75A 80V 0.014 Ohm N-Channel UltraFET Power MOSFETs
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
|
