| PART |
Description |
Maker |
| APT46GA90JD40 |
High Speed PT IGBT
Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
| MRF9100R3 MRF9100 MRF9100SR3 |
GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF9100, MRF9100R3, MRF9100SR3 GSM/EDGE 900 MHz, 110 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| APT36N90BC3G |
Super Junction MOSFET
Power MOSFET; Package: TO-247 [B]; ID (A): 36; RDS(on) (Ohms): 0.12; BVDSS (V): 900; 36 A, 900 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
Microsemi Corporation
Microsemi, Corp.
|
| MPC9239 |
900 MHz Low Voltage LVPECL Clock Synthesizer
900 MHz Low Voltage LVPECL Clock Syntheslzer
|
Motorola
|
| TMP95C061B E_030331_95C061B_SUMMARY |
16-Bit Microcontroller TLCS-900 Family: 900/H Series
From old datasheet system
|
Toshiba
|
| TMP93PW46A |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
| TMP93PW44A |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
| MUR1100E MUR190E ON2734 |
1 A, 900 V, SILICON, SIGNAL DIODE
ULTRAFAST RECTIFIERS 1.0 AMPERE 900-1000 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| FQA11N90-F109 FQA11N90F109 |
N-Channel QFET? MOSFET 900 V, 11.4 A, 960 mΩ
|
Fairchild Semiconductor
|
| IRFB20STRRPBF IRFB20SPBF |
1.7 A, 900 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET
|
|
| FCD900N60ZCT-ND |
FCD900N60Z N-Channel SuperFET II MOSFET 600 V, 4.5 A, 900 mΩ
|
Fairchild Semiconductor
|
