| PART |
Description |
Maker |
| Q68000-A8787 CGY62 |
GaAs MMIC (Two-stage microwave broadband amplifier IC 50 input / output) 200 MHz - 1800 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
GaAs MMIC (Two-stage microwave broadband amplifier IC 50 input / output)
From old datasheet system
GaAs MMIC (Two-stage microwave broadband amplifier IC 50 ヘ input / output)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| Q62702-F1382 BFP183 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) NPN硅射频晶体管（对于低噪声，高增益2毫安0毫安的集电极电流宽带放大器）
NPN Silicon RF Transistor (For low noise high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon Technologies AG
|
| MAX3537UTC |
Broadband Variable-Gain Amplifiers
|
MAXIM - Dallas Semiconductor
|
| VCXO-7050 VCXO-7050L |
Miniature VCXO Geared to Broadband
|
American KSS
KSS[Kyocera Kinseki Corpotation]
|
| RA55H4047M RA55H4047M-101 RA55H4047M11 |
RoHS Compliance , 400-470MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO
Broadband Frequency Range
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Sem...
|
| RA60H1317M RA60H1317M-101 RA60H1317M11 |
RoHS Compliance , 135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE RADIO
Broadband Frequency Range
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Sem...
|
| BFR181W Q62702-F1491 |
NPN Silicon RF Transistor )For low noise/ high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
From old datasheet system
|
SIEMENS[Siemens Semiconductor Group]
|
| BFP193W Q62702-F1577 |
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
From old datasheet system
|
SIEMENS[Siemens Semiconductor Group]
|
| MAALSS0012 MAALSS0012-3000 MAALSS0012SMB MAALSS001 |
Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:2; Connector Shell Size:32; Connecting Termination:Solder; Circular Shell Style:Square Flange Receptacle; Body Style:Straight
Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:4; Connector Shell Size:32; Connecting Termination:Solder; Circular Shell Style:Square Flange Receptacle; Body Style:Straight
Miniature Broadband Gain Stage 200 - 3000 MHz
|
MACOM[Tyco Electronics]
|
| BFR949T |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers in SC-75
|
Infineon Technologies AG
|
| BFR949L3 |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers in TSLP-3
|
Infineon Technologies AG
|
| MGF0909A11 |
High-power GaAs FET(small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
