PART |
Description |
Maker |
DMTH10H030LK3-13 |
Qualified to AEC-Q101 Standards for High Reliability
|
Diodes Incorporated
|
MG400Q1US65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
TOSHIBA
|
MG200Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor Mitsubishi Electric Semiconductor Toshiba Corporation
|
SGF23N60UFD SGF23N60UFDTU |
240 x 320 pixel format (Portrait Mode), CFL Backlight available with power harness 23 A, 600 V, N-CHANNEL IGBT Ultra-Fast IGBT Discrete, High Performance IGBT
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
MPQ20051-AEC1 |
Low Noise, High PSRR, 1A Linear Regulator AEC-Q100 Qualified
|
Monolithic Power System...
|
MPQ4415MGQB-AEC1 MPQ4415MGQBE-AEC1 |
1.5A, 36V, 2.2MHz, High-Efficiency, Synchronous, Step-Down Converter AEC-Q100 Qualified
|
Monolithic Power System...
|
MPQ4470AGL MPQ4470GL MPQ4470GL-AEC1 |
High-Efficiency, Fast-Transient, 5A, 36V Synchronous, Step-Down Converter AEC-Q100 Qualified
|
Monolithic Power Systems
|
DMN6070SFCL-15 DMN6070SFCL-7 |
60V N-CHANNEL ENHANCEMENT MODE MOSFET Qualified to AEC-Q101 standards for High Reliability
|
Diodes Incorporated
|
DSCC05003 |
Surface Mount Multilayer Ceramic Chip Capacitors High Frequency DSCC Qualified Type 05003
|
Vishay Siliconix
|
DMN6013LFG-13 DMN6013LFG-15 DMN6013LFG-7 DMN6013LF |
60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI? Qualified to AEC-Q101 Standards for High Reliability
|
Diodes Incorporated
|