| PART |
Description |
Maker |
| BB731 |
Silicon epitaxial planar capacitance diodes with very wide effective capacitance
|
TY Semiconductor Co., Ltd
|
| T3441N |
Full blocking 50/60Hz over a wide range temperature range
|
Infineon Technologies A...
|
| TGA4817-EPU |
10 Gb/s Wide Dynamic Range TIA
10Gb/s Wide Dynamic Range Differential TIA
|
TRIQUINT[TriQuint Semiconductor]
|
| BB512 Q62702-B479 |
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 8 V)
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 ?8 V)
From old datasheet system
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 ˇ 8 V) 470 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| R1LV0408CSP-7LI R1LV0408CSA-5SI R1LV0408CSA-7LI R1 |
Memory>Low Power SRAM
Wide Temperature Range Version 4M SRAM (512-kword 】 8-bit)
Wide Temperature Range Version 4M SRAM (512-kword 隆驴 8-bit)
Wide Temperature Range Version 4M SRAM (512-kword × 8-bit)
Wide Temperature Range Version 4M SRAM (512-kword 8-bit)
|
Renesas Electronics Corporation
HITACHI[Hitachi Semiconductor]
|
| LT6105 LTC2970 LTC2974 LTC2978 LTC4222 LTC2450 LTC |
Wide Range I2C Power Monitor Rail-to-Rail Input Range: 0V to 80V
|
Linear Technology
|
| GP30M GP30K GP30J GP30G GP30D GP30 |
SINTERED GLASS PASSIVATED JUNCTION RECTIFIER 烧结玻璃钝化整流
Aluminum Electrolytic Radial Leaded Low Profile Wide Temp Capacitor; Capacitance: 1000uF; Voltage: 35V; Case Size: 16x15 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Low Profile Wide Temp Capacitor; Capacitance: 220uF; Voltage: 35V; Case Size: 10x9 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Low Profile Wide Temp Capacitor; Capacitance: 470uF; Voltage: 35V; Case Size: 12.5x12.5 mm; Packaging: Bulk
|
Zowie Technology Corporatio...
Zowie Technology, Corp.
智威科技股份有限公司
|
| PD45128163-SU PD45128163G5-A75SU-9JF PD45128163G5- |
128M-bit Synchronous DRAM 4-bank/ LVTTL WTR (Wide Temperature Range)
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) 128兆位同步DRAM 4银行，LVTTL水树（宽温度范围
|
Elpida Memory, Inc.
|
| R1LV0416C-I R1LV0416CSB-5SI R1LV0416CSB-7LI |
Memory>Low Power SRAM
Wide Temperature Range Version 4M SRAM (256-kword 】 16-bit)
Wide Temperature Range Version 4M SRAM (256-kword × 16-bit)
|
Renesas Electronics Corporation
|
| GP02-40 GP02-20 GP02-25 GP02-30 GP02-35 |
Aluminum Electrolytic Radial Leaded Low Profile Wide Temp Capacitor; Capacitance: 1000uF; Voltage: 6.3V; Case Size: 10x90 mm; Packaging: Bulk
High Voltage Glass Passivated Junction Rectifier(高压钝化玻璃结型整流
Aluminum Electrolytic Radial Leaded Low Profile Wide Temp Capacitor; Capacitance: 2200uF; Voltage: 6.3V; Case Size: 12.5x15 mm; Packaging: Bulk
|
GE Security, Inc.
GE[General Semiconductor]
|
