| PART |
Description |
Maker |
| BSZ070N08LS5 |
OptiMOSa5 Power-Transistor, 80 V
|
Infineon Technologies A...
|
| BUW36 BUY69A BUY69B BUX48 BUX80 BDX87 BDX88 BDW51 |
Leaded Power Transistor Darlington
Power Transistors 15 A, 45 V, PNP, Si, POWER TRANSISTOR, TO-3
INDUCTOR PWR UNSHIELD 470UH SMT
Certification- 5.2kVDC Isolation- Power Sharing- Pin Compatible with RH & RK Series, SIP DC-DC Converters- UL94V-0 Package M
Leaded Power Transistor General Purpose
|
Central Semiconductor, Corp.
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
| IPI100N06S3L-03 IPB100N06S3L-03 IPP100N06S3L-03 SP |
OptiMOST Power-Transistor
OPTIMOS⑶-T POWER-TRANSISTOR
OptiMOS㈢-T Power-Transistor
OptiMOS?-T Power-Transistor
|
Infineon Technologies AG
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| TIP112T MJE15028A BUT56AW BUT56AA BUT56AN MOTOROLA |
2 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
8 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-220AB
8 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB
7 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
5 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2.5 A, 750 V, NPN, Si, POWER TRANSISTOR, TO-220AB
3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
6 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
1 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
Motorola Mobility Holdings, Inc.
MOTOROLA INC
|
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| CEN-U10 |
NPN SILICON POWER TRANSISTOR 0.5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-202
Leaded Power Transistor General Purpose
|
Central Semiconductor, Corp.
CENTRAL[Central Semiconductor Corp]
|
| IPB05N03LAG |
80 A, 25 V, 0.0078 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
OptiMOS㈢2 Power-Transistor
OptiMOS?2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| IPB091N06NG IPP091N06NG |
OptiMOSPower-Transistor 的OptiMOS㈢功率晶体管
OptiMOS㈢ Power-Transistor
OptiMOS? Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
|
