| PART |
Description |
Maker |
| STB20NM60 STB20NM60-1 STP20NM60 STP20NM60FP STB20N |
N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmeshPower MOSFET
N-CHANNEL 600V - 0.25 OHM - 20A TO-220/TO-220FP/D2PAK/I2PAK MDMESH POWER MOSFET
|
STMicroelectronics
|
| AOK20S60 |
600V 20A a MOS Power Transistor
|
Alpha & Omega Semiconductors
|
| U20D60 U20D30 U20D40 U20D50 |
POWER RECTIFIERS(20A/300-600V)
POWER RECTIFIERS(20A,300-600V)
|
MOSPEC[Mospec Semiconductor]
|
| AOT20S60 |
600V 20A a MOS TM Power Transistor
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| AOB20S60 AOT20S60 AOTF20S60 AOB20S60L |
600V 20A a MOS TM Power Transistor
600V 20A a MOS Power Transistor
|
Alpha & Omega Semiconductors
|
| RJQ6003DPM-00T0 RJP6003DPM |
600V - 20A - IGBT and Diode High Speed Power Switching
|
Renesas Electronics Corporation
|
| PS21965-4S |
600V/20A low-loss CSTBTTM inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| STW20NM60 STP20NM60 STB20NM60 STB20NM60-1 STB20NM6 |
N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET
|
STMicroelectronics
|
| APT6027HVR |
POWER MOS V 600V 20A 0.270 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| IRG4BC40U |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A)
|
International Rectifier
|
| STB20NM60-1 STB20NM60T4 STP20NM60 STP20NM60FP |
N-CHANNEL 600V - 0.25 OHM - 20A TO-220/TO-220FP/D2PAK/I2PAK MDMESH POWER MOSFET
|
ST Microelectronics
|
| STB20PF75 STB20PF75T4 |
P-CHANNEL 75V - 0.10 OHM - 20A DPAK STripFET™II POWER MOSFET
P-CHANNEL 75V - 0.10 ?- 20A D2PAK STripFET II POWER MOSFET
P-CHANNEL 75V - 0.10 з - 20A D?PAK STripFETII POWER MOSFET P通道75V 0.10з - 20A?巴基斯STripFET⑩二功率MOSFET
|
ST Microelectronics
STMicroelectronics N.V.
|
